O-Band Semiconductor Optical Amplifier Chips


Center Wavelength 1310nm; Output Power >18dbm; Bandwidth 40-60nm, Min Qty 10pcs

Part Number  :  PL-SOA--B-2-1310-BC
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  I80050001
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An SOA (Semiconductor Optical Amplifier) is a semiconductor element that amplifies light. Antireflective processing is applied on both facets of a semiconductor laser to eliminate the resonator structure. When light enters from outside the semiconductor, the light is amplified by stimulated emission.SOA is used for amplifying an optical signal. SOAs are included in the optical transceiver modules used for communication between data centers to amplify the optical signal in the 1.3 um band used for Ethernet communication in order to compensate for transmission loss.

LD-PD provides SOA modules that have high optical gain of 15 dB or higher and a low noise figure of 7 dB or less. The polarization dependent gain is also 1.5 dB or less, which enables signal amplification with practically no problem. 

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Test   condition

Min.

Typ.

Max.

Unit

Beam Angle

Ang

IF=120mA, Tc=25°C & Tc=40°C

26.5

° 

Center wavelength

λ C

IF=120mA, Tc=25°C

1280

nm

IF=120mA,   Tc=40°C

1290

nm

Operation Current

Iop

Tc=25C   & Tc=40°C

100

120

150

mA

Forward Voltage

Vf

IF=120mA,   Tc=25C & Tc=40°C

1.2

1.8

V

ASE spectrum bandwidth

BW

IF=120mA,   Tc=25C @-3dB

40

nm

IF=120mA,   Tc=40C @-3dB

40

Gain

G

IF=120mA, λin=1310 nm, Pin=-25 dBm, Tc=25°C

16

18

dB

IF=120mA, λin=1310 nm, Pin=-25 dBm, Tc=40°C

15

16

Noise Figure

NF

IF=120mA, λin=1310 nm, Pin=-25 dBm, Tc=25°C

7.5

dB

IF=120mA, λin=1310 nm, Pin=-25 dBm, Tc=25°C

7.5

ASE ripple

R

IF=120mA,   Tc=25C & Tc=40°C

0.1

0.2

dB

Polarization   dependent gain

PDG

IF=120mA,λin=1310 nm, Pin=-25 dBm, Tc=25C & Tc=40°C

1.5

dB

Saturated output power

SOP

IF=120mA,λin=1310 nm, Pin=-25 dBm, Tc=25°C

7

9

dBm

IF=120mA,λin=1310 nm, Pin=-25 dBm, Tc=40°C

7

8

dBm


Performance Plots:

ASE Spectrum CWL@~1290nm,Ripple<0.1dB,BW~44nm @40℃

t1.png


t2.png


PIV Cure

t3.png

Typical Characteristics

t4.png


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