• Home
  • Ge Photodiode
  • 10 mm x 10 mm Ge Photodiode

    • 10 mm x 10 mm Ge Photodiode     


    Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an"HS" series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.



    Product model


    Name Model Price
    10 mm x 10 mm Ge Photodiode   [PDF]  [RFQ]

    LP-GE-10X10
    Stock NO.: E80040087     		[Please inquire]
     Call us 


    Parameter



    Features

    ● Chip diameters from 1 mm to 25 mm

    ● Spectral response from 800 nm to 1800 nm

    ● High linearity > 10 dBm

    ● Multiple window and lens options

    ● Optical filters available (neutral density, bandpass, etc.)

    ● Thermoelectric cooling options

    ● Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more

    Specifications

    Specificationsa

    Sensor Material

    Ge

    Wavelength Range

    800   - 1800 nm

    Peak Wavelength

    1550 nm   (Typ.)

    Responsivityb

    0.95 A/W   (Typ.)

    Active Area

    100 mm2 (10 mm x 10 mm)

    Rise/Fall Time (RL = 50 Ohms, 1 V)

    10 µs (Typ.)

    NEP (1550 nm)c

    4.0 x 10-12  W/Hz1/2 (Typ.)

    Dark Current (0.3 V)

    50 µA (Max)

    Capacitance

    80 nF (Typ.) @ 1 V
      135 nF (Typ.) @ 0 V

    Shunt Resistance

    2000  Ohm (Typ.)

    Package

    Ceramic


    Max Ratings

    Max Bias (Reverse) Voltage

    1 V

    Reverse Current

    10 mA

    Operating Temperature

    -40 to 85 °C

    Storage Temperature

    -40 to 125 °C

    Note: Unless otherwise noted, all measurements are performed at 25 °C ambient temperature.

    Responsivity Specified at the Peak Wavelength

    NEP is Specified for the Photovoltaic Mode


    Responsivity Spectrum

    t1.png

    Dark Current

    t2.png

    This is a sample curve of the dark current. Actual performance will vary from photodiode to photodiode. Do not exceed the 1 V maximum reverse bias voltage.

    Dimension

    t3.png

    Application

    ● Optical power meters

    ● LED/LD characterization and burn-in diagnostics

    ● Spectroscopy

    ● LED/LD characterization

    ● Eye-safe laser detection sensors



    By using this website and services, you agree to our use of cookies. Cookies enable us to better provide member services and record your browsing records in a short time. OK Learn more
    10+
    10 Years of Experience
    50+
    50 + Countries Bussiness
    10000+
    10k + Diodes sold worldwide
    30+
    30+ Invention patent
    1
    1 Semiconductor Lab
    10
    10+ Advanced Optical Solutions
    Add : 288 Woodlands Loop #04-00, Singapore 738100 Email : info@ld-pd.com Tel : （+65)31638599 Fax : (+65)31588700 Copyright © 2012-2025 LD-PD PTE. LTD. All Rights Reverved  LD-PD PTE. LTD. is proud to be RoHS certified through SGS and ISO9001 certified through GIC.
    close[X]
    Your shopping cart
    Model Quantity Price Subtotal
    Total price：USD:
    View shopping cart Settlement
     TOP
    提示