Gain chips are semiconductor optical elements used as the optical gain medium of external cavity laser diodes. Gain chips are used as a TLS (Tunable Light Source) that can change the oscillation wavelength using a wavelength selection filter such as a diffraction grating.
Name | Model | Description | Parameter | Price |
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Basic parameter:
Parameter | Symbol | Test condition | Min. | Typ. | Max. | Unit |
Center wavelength | λc | If=100mA Tc=25°C | 1520 | - | 1560 | nm |
Operation Current | Iop | Tc=25°C | - | 250 | - | mA |
Forward Voltage | Vf | IF=100mA, Tc=25°C | - | 1 | 1.5 | V |
Spectrum Modulation | M | IF=100mA, Tc=25°C | - | 3 | - | dB |
ASE Spectrum bandwidth | BW | IF=100mA, Tc=25°C | - | 50 | - | nm |
Beam Angle | Ang | IF=100mA, Tc=25°C | - | 19.5 | - | ° |
ASE Power | Po | IF=100mA, Tc=25°C | - | 2 | - | mW |
AR reflectance | R1 | - | - | 0.005 | % | |
HR reflectance | R2 | - | 95 | - | % | |
Horizontal divergence Angle | θ∥ | IF=100mA, Tc=25°C | - | 18 | - | ° |
Vertical divergence Angle | θ⊥ | IF=100mA, Tc=25°C | - | 29 | - | ° |
PIV-25°C
ASE spectrum (100mA, Res: 0.5nm)
Spectrum~0.1dB,3dB BW~50nm,Center wavelength:1555nm
Divergence Angle
Horizontal divergence Angle: 17.74°, Vertical divergence Angle: 28.89°
Horizontal divergence Angle: 17.64°, Vertical divergence Angle: 30.08°
Chip appearance and size, unit (mm)