1653.7 nm InGaAsP/InP DFB Laser TO60 package-LD-PD PTE. LTD.

1653.7 nm InGaAsP/InP DFB Laser TO60 package

Central Wavelength 1653.7nm ; Output power 6 mW, SMSR 40dB, TO-60 package

Part Number : LP-1654T-A09-01

Unit Price : USD [Please inquire]

Lead time : in stock

Inventory quantity : [Please inquire]

Stock NO. : A80010150

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Overview
Specifications
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RFQ

The 1653.7nm products are AlGaInAs/InP based DFB LD for Methane sensing applications. These chips are processed using RWG technology. The facets are coated with an anti-reflectance coating on the front facet and a high reflectance coating on the rear facet. All laser chips come from wafers that have been certified using a representative lot of chips that must achieve an acceptable yield for chip test and dynamic test and Burn-in.

Parameters are tested at 25°C unless otherwise specified

Parameter	Symbol	Unit	Conditions	Value
Parameter	Symbol	Unit	Conditions	Min	Typical	Max
Threshold Current	I_th	mA	T=25℃,CW	-	-	15
Slople Efficiency	SE	mW/mA	I=I_th+20mA	-	0.25	-
Operating Current	I_op	mA	CW	-	50mA	-
Optical Output Power	P₀	mW	I=I_th+20mA	4	6	-
Center Wavelength	λ₀	nm	CW, I=I_op	1651.7	1653.7	1655.7
Forward voltage	V_f	V	I= I_op	-	-	2
Wavelength Temperature Coefficient	△λ/△T	nm/℃	T=T_op	-	0.1	-
Wavelength Current Coefficient	Δλ/ΔI	nm/mA	I= I_op	-	0.02	-
Side mode Suppression Ratio	SMSR	dB	CW, I= I_op	35	40	-
Thermistor Resistance	Rtherm	kΩ	10kΩ @ 25 °C	-	10	-
TEC Current	I_TEC	A	-	-	-	0.45
TEC Voltage	V_TEC	V	-	-	-	1.8
TEC Power	P_TEC	W	-	-	-	0.45

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings of extended periods can adversely affect device reliability.

Parameter	Unit	Conditions		Value
Parameter	Unit	Conditions	Min	Typical	Max
Operation temperature	℃	-	-20	-	75
Storage temperature	℃	-	-40	-	100
Optical output power	mW	CW	-	-	35
Laser reverse voltage	V	-	-	-	2
Laser forward current	mA	-	-	-	150
TEC Voltage	V	-	-	-	1.8
TEC Current	A	-	-	-	0.45

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Product title: 1653.7 nm InGaAsP/InP DFB Laser TO60 package
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1653.7 nm InGaAsP/InP DFB Laser TO60 package

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