100M Si Photodetector


Response wavelngth 400-1100nm, Bandwidth 100M, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Part Number  :  PD-100M-B
Unit Price  :  USD [Please inquire]
Lead time  :   [Please inquire]
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80040243
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Si photodetector consists of two matched ultra-low noise analog photodiodes, a low noise broadband transimpedance amplifier and Ultra Low Noise power supply. Due to high gain, high sensitivity, high bandwidth, low noise, and high common mode rejection ratio, the high speed and low noise balance photo detector can effectively reduce the commonmode noise, and improve the signal-to-noise ratio of the system.

Product Model

PD-100M-B

PD-200M-B

PD-300M-B

PD-400M-B

PD-1G-B

PD-2G-B

Unit

Detector

Si


Wavelength

400~1100

nm

Detector Responsivity

0.55@850nm

A/W

Bandwidth

100M

200M

300M

400M

1G

2G

Hz

Transimpedance Gain

30K

30K

30K

10K

30K

15K

V/A

Saturated Input Optical Power

240

240

240

725

240

480

μW

NEP

11

11

11

14

20

20

pW/Sqrt(Hz)

Output Impedance

50

50

50

50

50

50

Ω

Output Coupling Mode

DC/AC

DC/AC

DC/AC

DC/AC

AC

AC


Supply Voltage

5

5

5

5

12

12

V

Supply Current

0.3(max)

0.3(max)

0.3(max)

0.3(max)

0.3(max)

0.3(max)

A

Optical Input

FC/APCor Free Space


Radio Frequency Output

SMA


Shape Size

65*50*20

mm


Related



Name Model Price
200M Si Photodetector [PDF]

PD-200M-B

[Please inquire]
300M Si Photodetector [PDF]

PD-300M-B

[Please inquire]
400M Si Photodetector [PDF]

PD-400M-B

[Please inquire]
1G Si Photodetector [PDF]

PD-1G-B

[Please inquire]
2G Si Photodetector [PDF]

PD-2G-B

[Please inquire]

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