Gain chips are semiconductor optical elements used as the optical gain medium of external cavity laser diodes. Gain chips are used as a TLS (Tunable Light Source) that can change the oscillation wavelength using a wavelength selection filter such as a diffraction grating.
Electro-Optical Characteristics
Characteristics of RSOA chip:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Beam Exit Angle | Θext | Tc=25℃&CW I=200mA | -- | 19.5 | -- | 。 |
Optical Output Power | P | Tc=25℃&CW I=200mA | 5 | 15 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW I=200mA | -- | 2 | 4 | Ohm |
Forward Voltage | V | Tc=25℃&CW I=200mA |
| 1.3 | 2 | V |
Center wavelength | λ | Tc=25℃&CW I=200mA | -- | 1540 | -- | nm |
ASE bandwidth | Δλ | Tc=25℃&CW I=200mA@-3dB | 40 | 50 | -- | nm |
Angled Facet Reflectivity | R1 | -- | -- | 0.01 | -- | % |
R2 | -- | -- | 90 | -- | % |
Length | L | -- | -- | 1000 | -- | μm |
Farfield (Vertical) | θ v | Tc=25℃&CW I=200mA@R1 | -- | 19 | -- | 。 |
Farfield (Horizontal) | θ h | Tc=25℃&CW I=200mA@R1 | -- | 13 | -- | 。 |
Characteristics based on little external cavity reflectivity at 1550nm:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Threshold Current | Ith | Tc=25℃&CW | -- | 20 | 40 | mA |
Wavelength Range | λp | Tc=25℃&CW | -- | 1550 | -- | nm |
Optical Output Power | P | Tc=25℃&CW I=200mA | 20 | 40 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW I=200mA | -- | 2 | 4 | Ohm |
Side Mode Suppression Ratio | SMSR | Tc=25℃&CW I=200mA | -- | 50 | -- | dB |
Forward Voltage | V | Tc=25℃&CW I=200mA |
| 1.3 | 2 | V |
Typical Performance of RSOA Chip:
Absolute maximum ratings*：
Parameter | Symbol | Min. | Max. | Unit |
Operating Temperature | To | -5 | 85 | ℃ |
Storage Temperature | Ts | -40 | 100 | ℃ |
Forward current | If | -- | 500 | mA |
Reverse Voltage | VR | -- | 2 | V |
ESD(HBM) | ESD | -- | 500 | V |
*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.
1550nm High Power Gain Chip.pdf
