Using self-designed and produced external cavity chips, the laser achieves stable output with narrow linewidth, high power and low noise through hybrid integration, which is suitable for the field of highly integrated coherent detection. It has low phase noise, low frequency noise, and the integrated line width can reach below 3kHz; it has small design size, stable performance, and excellent vibration characteristics.
Basic index：
Output light characteristics
Parameter
Unit
Output optical power
≥ 10，20
mW
Integral linewidth
≤3, 5（note 1）
kHz
intrinsic linewidth
＜100
Hz
Operating wavelength
1550±5 or ITU-T Grid ±0.2
nm
Frequency stability
Typical ＜10-8 (2MHz)
@100s
Relative intensity noise
≤-150
dBc/Hz
Operating temperature
-10～60
℃
Optical isolation
≥40
dB
Electrical characteristics
Parameter
Unit
Supply voltage
5-6
V
Normal Operating current
500（note2）
mA
Module starting current
1500（note3）
mA
Note 1: The phase noise method is used to test, which is similar to the Lorentz linewidth of the simple test using the delayed self-difference beat method.
Note 2: Typical values are related to the external operating temperature.
Note 3: The current value of the module under the TEC high-current working state during startup. To ensure normal startup, the power supply is usually required to provide a current of 2A
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1550nm Narrow linewidth External Cavity Semiconductor Laser.pdf
