Response   Spectrum

λ

—

400～1100

nm

Active Diameter

D

—

0.8

mm

Reverse breakdown voltage

VBR

dark current ID=10μA,Optical output power φe=0

200

450

V

Operating voltage

VR

0.90×VBR

320

V

Responsivity

RV

M=100,λ=1.06μm,pulse   width TW=100ns

150

kV/W

Dynamic range

DY

M=100,λ=1.06μm

25

dB

-3dB bandwidth

BW

M=100,λ=1.06μm, pulse width TW=100ns

35

MHz

Rise/Fall time

Tr

M=100,λ=1.06μm, pulse width TW=100ns

10

ns

Noise Equivalent Power

NEP

M=100,f=100kHz,△f=1.0Hz

0.20

pW/   √Hz

Output impedance

RO

33

Ω

Output Voltage Swing

VO

-

0.7

V

Offset Voltage

Voffset

-

-0.7

V

Positive Supply Current

ICC

10

mA

Negative Supply Current

IEE

10

mA

Temperature coefficient

σ

-45℃~+70℃

2.4

V/℃

Concentricity

△D

-

50

μm