Wavelength range

200-1100nm

350-1100nm

320-1100nm

Photosensitive size

Φ1.0mm

Φ3.6mm

Φ10.0mm

Bandwidth range

350MHz

25MHz

10MHz

Rise time (@50Ω)

1ns

14ns

35ns

NEP

5.0 × 10^-14W/Hz^1/2

1.6 × 10^-14W/Hz^1/2

2.4 × 10^-14W/Hz^1/2

Dark current

0.3nA(Typ.)/10 nA(Max)

0.35nA(Typ.)/6.0nA(Max)

0.9nA(Typ.)/10nA(Max)

Junction capacitance

6pF(Typ.)

40pF(Typ.)

150pF(Typ.)

Bias voltage

10V

Output current

0~10mA

Output voltage

~9V(Hi-Z)；

~170mV(50Ω)

Photosensitive surface   depth

0.09" (2.2mm)

0.09" (2.2mm)

0.13" (3.3mm)

Operating temperature

10-40℃

Storage temperature

-20-70℃

Detector net weight

0.10kg

Undervoltage index

Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

Appearance size

2.79" X1.96" X0.89"  (70.9mm X 49.8mm X22.5mm)

Power supply battery

Power switch

Signal interface

Battery monitoring

Strut interface

Optical interface

A23 ，12VDC   ，40mAh

Slide switch

BNC female connector

Momentary Push Buttons

M4 X 2

SM1 X 1

SM0.5 X 1

Product Name

Material

Type

Feature

Wavelength range Active Area

Reserve Optional configuration

PD: "Photodetector"

S:Si Silicon-based

B: Bias type

C: Conventional type

2B10: 200-1100nm, Φ1.0mm

3E36: 350-1100nm, Φ3.6mm

3D100: 320-1100nm, Φ10.0mm