LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Performance Specifications
Product Number | InAsSb-2/11um-1X1-AG8 | InAsSb-2/5um-2X2-AG8 |
Wavelength range | 2~11um | 2~5.3um |
Peak wavelength | 5.6um | 4.1um |
Response time constant | 3ns | 100ns |
D* | 7.0X107cm·Hz1/2/W | 1.0X109cm·Hz1/2/W |
Signal amplitude | Hi-Z load: 0~10V 50Ω load: 0~5V |
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
NEP | 1.4X10-9W/√ Hz 2.0X10-10W/√ Hz |
Photosensitive size | 1mm X 1mm | 2mm X 2mm |
Photosensitive surface depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～70℃ |
Appearance size | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Power supply interface | Power switch | Signal interface | Gain Adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female connector | 8-position knob | M4 X 2 | SM1 X 1 SM0.5 X 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51×103 V/A | Gain (Hi-Z) | 4.75×103 V/A | Gain (Hi-Z) | 1.5 ×104V/A | Gain (Hi-Z) | 4.75×104 V/A |
Gain (50Ω) | 0.75×103 V/A | Gain (50Ω) | 2.38×103 V/A | Gain (50Ω) | 0.75×104V/A | Gain (50Ω) | 2.38×104 V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51× 105 V/A | Gain (Hi-Z) | 4.75×105 V/A | Gain (Hi-Z) | 1.5×106V/A | Gain (Hi-Z) | 4.75×106 V/A |
Gain (50Ω) | 0.75× 105 V/A | Gain (50Ω) | 2.38×105 V/A | Gain (50Ω) | 0.75×106V/A | Gain (50Ω) | 2.38×106 V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal bias | ±8mV(Typ.), ±12mV(Max) |
MCT Response Curve
2-12um InAsSb amplified photodetector, conventional.pdf
