LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Performance Specifications
Parameters | Value |
Wavelength range | 1-5um | 2-12um |
Peak wavelength | 4.5um | 10.6um |
Response time constant | ≤120ns | 1.5ns |
D* | 2.0X1010cm·Hz1/2/W | 1.0X107cm·Hz1/2/W | 7.0X108cm·Hz1/2/W |
Signal amplitude | Hi-Z load: 0 ~ 10V; 50Ω load: 0 ~ 5V |
Gain adjustment method | Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
Photosensitive size | 1mm×1mm |
Photosensitive surface depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10-40℃ |
Storage temperature | -20-70℃ |
Appearance size | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Photoelectric response | ≥0.5A/W | ≥0.004A/W | ≥0.14A/W |
Optical immersion | With infiltration lens | No infiltration | With infiltration lens |
Power supply interface | Power switch | Signal interface | Gain Adjustment | Support rod interface | Optical interface |
LUMBERG RS MV3 FEMALE | Slide switch with LED indicator | BNC female connector | 8-position knob | M4×2 | SM1 × 1 SM0.5 × 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51× 103V/A | Gain (Hi-Z) | 4.75× 103V /A | Gain (Hi-Z) | 1.5 × 104V/A | Gain (Hi-Z) | 4.75× 104 V/A |
Gain (50Ω) | 0.75× 103V/A | Gain (50Ω) | 2.38× 103V /A | Gain (50Ω) | 0.75× 104V/A | Gain (50Ω) | 2.38× 104 V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51× 105V/A | Gain (Hi-Z) | 4.75× 105V/A | Gain (Hi-Z) | 1.5 × 106V/A | Gain (Hi-Z) | 4.75× 106 V/A |
Gain (50Ω) | 0.75× 105V/A | Gain (50Ω) | 2.38× 105V/A | Gain (50Ω) | 0.75× 106V/A | Gain (50Ω) | 2.38× 106 V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal bias | ±8mV(Typ.),±12mV(Max) |
MCT Response Curve
Appendix 1: Optional Configuration Table
InAsSb Amplified Photodetector | Optional Configuration |
Product Name | Material | Type | Features | Wavelength range Photosensitive size | Reserve optional configuration |
PD: "Photodetector" | M: MCT Mercury Cadmium Telluride | A: Enlarged | A: Adjustable gain | P10： 1-5um, 1mm×1mm R10 ：2-12um, 1mm×1mm | S: Sensitive model in 2-12um |
2-12um InAsSb amplified photodetector, sensitive type .pdf
