The laser is a semiconductor InGaAsP DFB laser working at the 1625nm, 1648.2nm, 1650.9nm or 1653.7 nm wavelength range. The device can be delivered in chip forms. This high performance, and high reliability laser is suitable for gas detection application.

Electro-Optical Characteristics for DFB-1XXX-250

* SE is calculated by differential method. Without card control, power standard is Pf.

** It is recommended that bias current should not exceed 80mA under AC modulation.

Absolute Maximum Rating

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet.  Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

* These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.

** The accumulated ESD test must be performed on two sets of laser chips on TO CAN after burn-in. Each group of chips consists of 30 devices and must be tested by only one polarity. The ESD discharge test starts from 100V, with 100V step. After each ESD discharge, the following spec will be tested: Ith, SE, Kink and SMSR. The device will be considered to be a failed device if each test spec exceeds 10% of original value or SMSR is less than 25dB. ESD threshold will be reached if one of 30 devices failed. Both polarity ESD threshold must be more than 500V.

Recommended burn-in conditions

● Chip oven temperature: 90℃

● Current: 120mA Image     Time: 12 hours

● Pass Criteria: |RT((Ith(aft)-Ith(bef))/Ith(bef))|≤1mA

                        |RT((SE(aft)-SE(bef))/SE(bef))|X100%≤10% 

The wafer Burn-in characteristics are inspected by sampling test.

The supplier carriers out the sampling test.

(1)  Number of test sample 60pcs/Wafer

(2) Acceptable number of rejects ≤3pcs/Wafer（Yield Rate≥95%）

(3)  If the rejects exceed 3pcs ，The wafer Chip will be kept inside the Yuanjie factory.

Note : In case of some chips have Ith change of more than 1 mA during  1st  burn-in,  a 2nd  burn-in can be performed on these  chips to ensure the chip and TO  reliability are  not  compromised  during  eIther  chip fabrication or TO packaging. The burn-in condition is the same as above. After 2nd burn-in, if these chips Ith change is less than 1mA, these chips can be used. if these chips Ith change is more than 1 mA, these chips should be discarded.

Electrical and Optical overstress (ESD/EOS) Information

Switching transients can cause electrical overstress (EOS) damage in a chip. EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection. Proper turn-on sequence：

1）All ground connections

2） Most negative supply

3） Most positive supply

4）All remaining connections

5） Reverse order to turn-off.

Recommended Bonding Conditions

* The conditions may be adjusted depending on the bonding equipment.

* InP chips are inherently fragile and easily damaged. Special caution should be used when handling. Do not handle with tweezers. A vacuum tip with a flat surface is recommended.

1）Facets should not be touched.

2）Bonding force and temperature should be applied in a gradual fashion.

Packing and label

The products will be packed on Blue Tape in Grip Ring as described in this figure.

Dimensions and Layout

Chip Thickness: 110 ± 10

1290, 1330, 1350, 1370, 1390, 1410, 1430, 1450, 1470, 1510, 1530 Chip Thickness: 110 ± 10 um

1310 Chip Thickness: 110 ± 10 um

1490 Chip Thickness: 110 ± 10 um

1550, 1570, 1590, 1610 Chip Thickness: 110 ± 10 um