Back-incidence InGaAs Single-Photon Avalanche Diode(SPAD) Small Array Chip Series include multiple models such as 2x2, 1x16 and 4x4. The pixel pitch of all models is 50 microns. It adopts a back-incidence structure and integrate micro-lenses on the back to enhance the effective duty cycle, meeting the application requirements of spatial light single photon detection, etc.
DC Characteristics Specifications *
Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Active Diameter | Φ | ✝ | 45 | 48 | 50 | μm |
Spectral Range | Δλ | - | 950 | - | 1650 | nm |
Breakdown Voltage | VBR | IR =10μA, PIN =0 | 50 | 70 | 90 | V |
DC Dark Current | ID | VR =VBR-2V, PIN =0 | - | 1 | 10 | nA |
1550nm-Responsivity | R1550 | VR =VBR-2V, PIN =10μW (1550nm) | 8.0 | 8.5 | - | A/W |
Capacitance | C | VR =VBR-2V, f=1MHz | - | 0.2 | 0.5 | pF |
Vbr temperature coefficient | η | IR =10μA, PIN =0, -40~25℃ | - | 0.10 | 0.15 | V/℃ |
* All tests are taken at room temperature if not indicated.
✝ This is the backside micro-lens dimension.
Single Photon Detection Characteristics **
Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Photon Detection Efficiency | PDE | TOP = -30℃, λ = 1550nm, 0.1 ph/pulse | 20% | - | - | - |
Dark Count Rate | DCR | TOP = -30℃, 1ns & 100MHz gated mode | - | - | 20 | kHz |
After-pulsing Probability | APP | The same of PDE test with 100ns hold-off time | - | - | 4% | - |
Timing Jitter | TJ | TOP = -30℃, 1ns & 100MHz gated mode, PDE = 20% | - | 2 | - | ps |
Neighboring Pixel Cross-talk Probability | PXT | TOP = -30℃, dark count statistics at Vex corresponding to PDE = 20% | - | - | 20% | -
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**Single-photon detection characteristics are closely related to the quenching circuitry and test conditions. Please contact our specialists for more details.
Absolute Maximum Ratings
TOP Operating Temperature | TSTG Storage Temperature | IF Average Forward Current | IR Average Reverse Current |
-40 ~ +85 ℃ | -50 ~ +100 ℃ | 10 mA | 2 mA |
Bare die Dimensions ***
Part Num. | Pixel Num. | Chip Dimensions | Chip Thickness | Back-side Micro-lens Features |
GM2P50B | 2 ×2 | 400μm×400μm | 200μm | 48μm × 48μm, R137μm |
GM4P50B | 4 ×4 | 800μm×800μm | 200μm | 48μm × 48μm, R137μm |
GM16×1P50B | 1 × 16 | 450μm×1050μm | 200μm | 48μm × 48μm, R137μm |
*** The chip dimension error is ± 10 μ m, thickness ± 5 μ m, micro-lens size ± 2 μ m, radius of curvature ±12μm.
Bare die Layout****
****The active areas are covered by metallic reflectors on the front-side. The shadowed areas on the back-side view are the photo-sensitive window. It is suggested to use a ceramic interposer with appropriate aperture to flip the chip for further packaging.
The electrodes connected to pixels are anodes, while the other metal- covered areas are the common cathode.
Reliability:
Qualified to Telcordia-GR-468-CORE.
Back-incidence InGaAs Single-Photon Avalanche Diode Array Chip Series.pdf
