Central wavelength 850nm, Output power 125mW, ASE bandwidth 30nm, (Min qty: 5pcs)
Part Number : HP-GC-850-1-TO |
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Gain-chips are critical components for building tunable diode lasers and highly stable external cavity diode lasers. Unlike standard laser diode chips, gain-chips feature deep anti-reflective (AR) coatings on one or both facets, significantly increasing the self-lasing threshold or preventing it. Common external cavity diode laser configurations include Littrow and Littman/Metcalf cavities, where diffraction gratings are used to diffract light of the desired wavelength back along the incident path, with wavelength tuning achieved by rotating the grating. An intracavity lens often collimates the expanded beam onto the grating, and the zero-order beam serves as the laser output.
Recommended Operating Point
Parameters | Value | Unit |
Current | 150 | mA |
Forward voltage | 1.8 | V |
Heatsink temperature | 25 | ℃ |
Expected Tunability Parameters @ CW, recommended operating point, external cavity in Littman configuration with 200% feedback
Parameter | Value | Unit |
Wavelength of maximum power (λmp) | 850 | nm |
Optical output power @ λmp | 30 | mW |
Central wavelength of tuning range | 845 | nm |
Wavelength locking range | 30 | nm |
Chip cavity length | 2 | mm |
Reflectivity of front facet (AR-coated) | <0.001 | % |
Reflectivity of back facet (HR-coated) | 99 | % |
Absoulute Maximum Ratings
Parameters | Min | Max | Unit |
Reverse voltage | 1 | V | |
Forward current | 300 | mA | |
Storage temperature range (in original sealed pack) | 5 | 50 | ℃ |
Operating temperature range | 20 | 40 | ℃ |
Typical Performance Without External Cavity @ CW, 25°C heatsink temperature
L-I-V curve
ASE spectrum
Typical Performance Without External Cavity @ CW, 25°C heatsink temperature, Littman configuration with 20% feedback, Thorlabs GR-25-1208 grating
Output power @ 850 nm
Optical spectrum @ 150mA (res. 0.025 nm)