The LD-PD's pulsed semiconductor laser module is a monolithic 905nm InGaAs/GaAs strained quantum well laser which can be driven individually in the 30A version, Laser has current injection width 200µm, depending on version, and height 10-480µm.The laser diode’s package design and assembly processing techniques, we now Provide 9 mm Package, 5.6 Package, TO18F Package.

Quantum well laser design offers rise and fall times of<1 ns however the drive circuit layout and package inductance play a dominant role and should be designed accordingly.

Electrical/Optical Characteristics (Drive Conditions: 100ns 30Amps 1kHz @ 25°Cunless stated otherwise)

Center Wavelength vs. Temperature

Spectrum 

L-I Curve