The laser is is a semiconductor InGaAsP DFB laser working at 1550nm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameter | Symbol | Min | Typ | Max | Unit |
Centre Wavelength | λ | 1545 | 1550 | 1555 | nm |
Side Mode Suppression Ratio | SMSR | 35 | 40 |
| dB |
Threshold Current | Ith |
| 20 | 40 | mA |
Operating Current | Iop |
| 400 | 500 | mA |
Chip output Power | Pf | 60 | 100 |
| mW |
Quantum Efficiency | η | 0.2 | 0.3 |
| mW/mA |
Current Tuning Coefficient | ∆λ/∆I |
| 0.015 |
| nm/mA |
Temperature Tuning Coefficient | ∆λ/∆T |
| 0.12 |
| nm/K |
Forward Voltage | Vf |
| 1.3 | 2 | V |
Kink deviation | KINK | 30% |
Beam divergence angle (parallel) | ϑ// |
| 20 |
| Deg |
Beam Divergence angle (perpendicular) | ϑ⊥ |
| 25 |
| Deg |
Resistance | Rs |
| 8 |
| ohm |
Linewidth width | △λ |
| 200 |
| KHZ |
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
Im | Threshold Current | CW，T=25°C |
| 20 | 40 | mA |
Po | Output Power | CW，lth+20mA, T=25°C | 4 | 6 |
| mW |
CW, Ith + 400 mA, T=25 °C, TEC controlled. | 60 | 100 |
|
SE | Slope Efficiency | CW, Ith + 20 mA, T=25 °C | 0.2 | 0.3 |
| W/A |
Vop | Operating Voltage | CW, Ith + 20 mA |
| 1.2 | 1.5 | V |
CW, Ith + 400 mA, TEC controlled |
| 2.5 | 3.5 |
△υ | Linewidth | CW, Ith + 300 mA, TEC controlled |
| 200 | 1000 | KHz |
RIN | Relative Intensity Noise | CW, Ith + 300 mA, TEC controlled, @1GHz |
| -160 | -155 | dB/Hz |
λc | Center Wavelength | CW, Ith + 20 mA | 1545 | 1550 | 1555 | nm |
SMSR | Side Mode Suppression Ration | CW, Ith + 20 mA | 35 | 40 |
| dB |
ϑ// | Beam Divergence Angle (parallel) | CW, Ith + 20 mA |
| 20 |
| Deg. |
ϑ丄 | Beam Divergence Angle (perpendicular) | CW, Ith + 20 mA |
| 25 |
| Deg. |
Handling Procedures
1.Suggested bonding condition
● Bonding temperature: 350℃
● Bonding force: 30 grams (not exceed 40 grams)
● Bonding force and temperature should be applied in a gradual fashion
● Bonding time: <= 10 seconds
2.Suggested burn-in conditions:
Conditions 1：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours
● Pass Criteria: BI 0hrs LIV1；BI 24hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%
Conditions 2：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours+48hrs
● Pass Criteria: BI 24hrs LIV1；BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%
Outline Drawing
Absolute maximum ratings
Item | Unit | Min | Typ | Max |
Case Temperature | ℃ | -5 | 25 | 70 |
Chip Temperature | ℃ | +10 | 25 | 50 |
Operating Current | mA | 0 | 400 | 500 |
Forward Voltage | V | 0.8 | 1.2 | 2.0 |
Suggest TEC Current | A | - | - | 1.2 |
Reverse Voltage（LD） | V | - | - | 2.0 |
Reverse Voltage(PD) | V | - | - | 20 |
Note：
1.Stresses which exceed the absolute maximum ratings can cause permanent
damage to the device.
2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.
3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.
1550 High Power DFB Laser Chip for DWDM.pdf
