Response Spectrum 800~1700nm; Active diameter 10mm; responsivity:0.85A/W@1.31µm or 0.95A/W@1.55µm ,Material InGaAs
Part Number : PL-1700-IG-AR10-TO20 |
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Stock NO. : E80042060 |
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PL-1700-IG-AR10-TO20 InGaAS PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 10mm in diameter. Planar-passivated device structure.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 800~1700 | nm | ||
Active diameter | φ | - | 10 | mm | ||
responsivity | Re | λ=1.31µm,VR=5V,φe =10µw | 0.85 | A/W | ||
λ=1.55µm,VR=5V,φe =10µw | 0.95 | |||||
Reverse breakdown voltage | VBR | I R =10µA | 25 | V | ||
Dark current | ID | V R =5V | 200 | nA | ||
Total capacitance | C | V R =5V | 10 | nF | ||
Shunt impedance | RSh | V R =10mV | 10 | MΩ | ||
Response time | tS | VR=5V,RL=50Ω,f=2KHz | — | 8 | 20 | μs |
Reponsivity Nouniformity | PRNU | VR=5V,λ=1.55μm,φe=100μw | ±2 | % |
Typical characteristical curve
Responsivity, R (A/W)
Wavelength, λ (nm)
P-I Curve
Application electric circuit