PD300 InGaAs Photodiode Chip


Response wavelngth 1000~1680nm, Material InGaAs, Active area 300um, Die Package, size 500μm×500μm (Min Order:100PCS)

Part Number  :  PD300
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  I80030008
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InGaAs photodiodes offer superb response from 900nm to 1700nm, perfect for telecom and near IR detection. The 75 and 120 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling or Bare chips. These two sizes are also available with actively aligned FC receptacles. The 70 micron photodiode is perfect for high bandwidth applications while the 120 micron photodiode is perfect for active alignment applications. The 3mm photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 3mm photodiode is suitable for high sensitivity to weak signal applications.

The Opto-electronic Characteristics(@Tc=22±3℃)

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

-

10001680

nm

Active Diameter

$

-

300

μm

Reponsivity

Re

λ=1.31μm,   VR=5V, φe=100μW

0.9

-

-

A/W

Forward Voltage

VF

IF=1mA

-

0.6

0.7

V

Reverse Breakdown Voltage

VBR

ID=10μA, φe=0

35

40

-

V

Dark Current

ID

VR=5V, φe=0

-

0.2

0.8

nA

Capacitance

CPD

VR=5V, φe=0,   f=1MHz

-

5

8

pF

Rising Time/Falling Time

Tr/Tf

VR=5V, φe=1mW

-

0.5

1

ns

DC Saturation Power

Sat

VR=0V

1.0

2.5

-

mW

VR=5V

6.0

14.0

-


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