Response wavelngth 1000~1680nm, Material InGaAs, Active area 300um, Die Package, size 500μm×500μm (Min Order:100PCS)
Part Number : PD300 |
Unit Price : USD [Please inquire] |
Lead time : in stock |
Inventory quantity : [Please inquire] |
Stock NO. : I80030008 |
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InGaAs photodiodes offer superb response from 900nm to 1700nm, perfect for telecom and near IR detection. The 75 and 120 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling or Bare chips. These two sizes are also available with actively aligned FC receptacles. The 70 micron photodiode is perfect for high bandwidth applications while the 120 micron photodiode is perfect for active alignment applications. The 3mm photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 3mm photodiode is suitable for high sensitivity to weak signal applications.
The Opto-electronic Characteristics(@Tc=22±3℃)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 1000~1680 | nm | ||
Active Diameter | $ | - | 300 | μm | ||
Reponsivity | Re | λ=1.31μm, VR=5V, φe=100μW | 0.9 | - | - | A/W |
Forward Voltage | VF | IF=1mA | - | 0.6 | 0.7 | V |
Reverse Breakdown Voltage | VBR | ID=10μA, φe=0 | 35 | 40 | - | V |
Dark Current | ID | VR=5V, φe=0 | - | 0.2 | 0.8 | nA |
Capacitance | CPD | VR=5V, φe=0, f=1MHz | - | 5 | 8 | pF |
Rising Time/Falling Time | Tr/Tf | VR=5V, φe=1mW | - | 0.5 | 1 | ns |
DC Saturation Power | Sat | VR=0V | 1.0 | 2.5 | - | mW |
VR=5V | 6.0 | 14.0 | - |