Response wavelngth 900~2200nm, Material InGaAs, Active area 2mm, TO5 Package
Part Number : PL-2200-IG-AR2-TO5 |
Unit Price : USD [Please inquire] |
Lead time : in stock |
Inventory quantity : [Please inquire] |
Stock NO. : E80042046 |
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LD-PD-2000E Extended InGaAs Photodiodes, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 2200 nm.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters | Sym. | Min | Typ | Max | Unit |
Peak Wavelength (typ) | λ | 900~2200 | nm | ||
Active diameter | φ | 2000 | um | ||
Responsivity @λP(min/typ) | Re | 0.9 | 1.0 | A/W | |
Shunt Resistance (min/typ) | 6k | 10k | Ω | ||
Dark Current (max) @ 1V | 40 | uA | |||
Capacitance (typ) @ 0V | 4000 | pF | |||
Bandwidth w/ 50Ω@ 0 V (typ) | 0.795 | MHz | |||
Rise time w/ 50Ω@ 0 V (typ) | 440 | ns | |||
NEP @λPEAK (typ) | 128 x 10-14 | W/Hz1/2 | |||
Linearity (±0.2 dB @ 0 V) | 6 | dBm | |||
Case Style | TO-5 |
Typical characteristical curve
Relative Responsivity(X100%)
Wavelength, λ (nm)
Application electric circuit
Dimensions and Pin definitions
Absolute Maximem Ratings
Item | Symbol | Unit | Min | Typ | Max |
Storage Temperature | Tstg | ℃ | -40 | - | 125 |
Operating Temperature | TOP | ℃ | -40 | - | 85 |
Reverse Voltage | VPD | V | 1 | ||
Reverse Current | IPR | mA | 10 | ||
Forward Current | IPF | mA | 10 | ||
Power Dissipation | mW | 50 |