2mm Extended InGaAs Photodiodes


Response wavelngth 900~2200nm, Material InGaAs, Active area 2mm, TO5 Package

Part Number  :  PL-2200-IG-AR2-TO5
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80042046
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LD-PD-2000E Extended InGaAs Photodiodes, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 2200 nm. 

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters

Sym.

Min

Typ

Max

Unit

Peak Wavelength (typ)

λ

900~2200

nm

Active diameter

φ

2000

um

Responsivity @λP(min/typ)

Re

0.9

1.0


A/W

Shunt Resistance (min/typ)


6k

10k


Ω

Dark Current (max) @ 1V




40

uA

Capacitance (typ) @ 0V



4000


pF

Bandwidth w/ 50Ω@ 0 V (typ)



0.795


MHz

Rise time w/ 50Ω@ 0 V (typ)



440


ns

NEP @λPEAK (typ)



128 x 10-14


W/Hz1/2

Linearity (±0.2 dB @ 0 V)



6


dBm

Case Style



TO-5



Typical characteristical curve

Relative Responsivity(X100%)

3m.png

Wavelength, λ (nm)

Application electric circuit

5b73815e9f414.png

Dimensions and Pin definitions

TO5.png

Absolute Maximem Ratings

Item

Symbol

Unit

Min

Typ

Max

Storage Temperature

Tstg

-40

-

125

Operating Temperature

TOP

-40

-

85

Reverse Voltage

VPD

V

1

Reverse Current

IPR

mA

10

Forward Current

IPF

mA

10

Power Dissipation


mW

50


Related



Name Model Price
3mm Extended InGaAs Photodiodes [PDF]

PL-2200-IG-AR3-TO5

[Please inquire]
1mm Extended InGaAs Photodiodes [PDF]

PL-2200-IG-AR1-TO46

[Please inquire]

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