The laser diode with a period grating provides a high side-mode suppression ratio (SMS) over a wide temperature range. In order to achieve the high bias injection efficiency and low leakage current,waveguide stripe is applied for current confinement. The waveguide stripes, including multiple quantum wells (MQWs) active layers and period grating for low threshold current, high slope efficiency and high temperature characteristic (TO) design.
The laser diode with alignment mask and broad-area metal pad on the p-side is designed for p-side down mounting process. The continue-wave DC characteristic over wide temperature range of laser chips have been verified and validated repeatedly.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameter | Symbol | Min | Typ | Max | Unit |
Centre Wavelength | λ | 1306 | 1310 | 1316 | nm |
Side Mode Suppression Ratio | SMSR | 35 | 45 |
| dB |
Threshold Current | Ith |
| 20 | 40 | mA |
Operating Current | Iop |
| 230 | 250 | mA |
Chip output Power | Pf | 50 | 70 |
| mW |
Quantum Efficiency | η | 0.2 | 0.3 |
| mW/mA |
Current Tuning Coefficient | ∆λ/∆I |
| 0.015 |
| nm/mA |
Temperature Tuning Coefficient | ∆λ/∆T |
| 0.12 |
| nm/K |
Forward Voltage | Vf |
| 1.3 | 2 | V |
Kink deviation | KINK | 30% |
Beam divergence angle (parallel) | ϑ// |
| 19 |
| Deg |
Beam Divergence angle (perpendicular) | ϑ⊥ |
| 17 |
| Deg |
Resistance | Rs |
| 8 |
| ohm |
Linewidth width | △λ |
| 3 |
| MHZ |
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
Im | Threshold Current | CW，T=25°C |
| 20 | 40 | mA |
Po | Output Power | CW，lth+20mA, T=25°C | 4 | 6 |
| mW |
CW, Ith + 200 mA, T=25 °C, TEC controlled. | 50 | 80 |
|
SE | Slope Efficiency | CW, Ith + 20 mA, T=25 °C | 0.2 | 0.3 |
| W/A |
Vop | Operating Voltage | CW, Ith + 20 mA |
| 1.2 | 1.5 | V |
CW, Ith + 200 mA, TEC controlled |
| 2.5 | 3.5 |
△υ | Linewidth | CW, Ith + 200 mA, TEC controlled |
| 3 | 10 | MHz |
RIN | Relative Intensity Noise | CW, Ith + 200 mA, TEC controlled, @1GHz |
| -150 | -145 | dB/Hz |
λc | Center Wavelength | CW, Ith + 20 mA | 1306 | 1310 | 1316 | nm |
SMSR | Side Mode Suppression Ration | CW, Ith + 20 mA | 35 | 40 |
| dB |
ϑ// | Beam Divergence Angle (parallel) | CW, Ith + 20 mA |
| 19 |
| Deg. |
ϑ丄 | Beam Divergence Angle (perpendicular) | CW, Ith + 20 mA |
| 17 |
| Deg. |
Handling Procedures
1. Suggested bonding condition
● Bonding temperature: 350℃
● Bonding force: 30 grams (not exceed 40 grams)
● Bonding force and temperature should be applied in a gradual fashion
● Bonding time: <= 10 seconds
2. Suggested burn-in conditions
Conditions 1：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours
● Pass Criteria: BI 0hrs LIV1；BI 24hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%
Conditions 2：
● Chip heatsink temperature: 100℃
● Current: 100mA
● Time: 24 hours+48hrs
● Pass Criteria: BI 24hrs LIV1；BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1
● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%
O band High power distributed-feedback laser diode Chips.pdf
