1680nm DFB Laser diode for C2H6 Sensing（TO39 Package）

The PL-DFB-1680-A-A81 1680nm DFB laser diode module made by LD-PD is a cost effective, highly coherent laser source. The DFB laser diode chip is packaged in an industry standard hermetically sealed TO39 package with TEC and PD Built in.

Name	Model	Description	Parameter	Price
1680nm DFB SM Laser diode（TO39） [PDF] [RFQ]	PL-DFB-1680-B-A81-TO39 Stock NO.: A80011254	Centre Wavelength 1680nm, Output power 20 mW, Narrow Linewidth < 2MHz, Tolerance ±1nm, TO39	Central wavelength: 1680nm Output power: 20mW Package: TO-39 Lead Time: 6-8 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1680nm DFB SM Laser diode（TO39） [PDF] [RFQ]

PL-DFB-1680-B-A81-TO39
Stock NO.: A80011254

Centre Wavelength 1680nm, Output power 20 mW, Narrow Linewidth < 2MHz, Tolerance ±1nm, TO39

Central wavelength: 1680nm

Output power: 20mW

Package: TO-39

Lead Time: 6-8 weeks

[Please inquire]

Call us

Parameter

Features

● Narrow Linewidth < 2MHz

● Excellent wavelength control and stability

● Industry Standard TO39 package

● Mode-Hop free tuning

● Excellant reliability

● Customer specific wavelengths available

Laser Specifications

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter	Symbol	Min	Typ	Max	Unit
Centre Wavelength	λ	1679	1680	1681	nm
Side Mode Suppression Ratio	SMSR	30	40		dB
Threshold Current	Ith		20	30	mA
Operating Current	Iop		80	120	mA
Chip output Power	Pf	10	15	30	mW
Quantum Efficiency	η	0.08	0.12		mW/mA
Current Tuning Coefficient	∆λ/∆I		0.015		nm/mA
Temperature Tuning Coefficient	∆λ/∆T		0.12		nm/K
Forward Voltage	Vf		1.3	2	V
Thermistor Resistance	RT	9.5	10	10.5	KΩ
Thermistor Temp. Coefficient			-4.4		%/°C

Spectrum

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Tuning Characteristics

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DFB Linewidth Testing Result

Power Stability

Wavelength Stability

2F Signal testing Condition(200pm C2H6,20m optical path,25℃,1atm)

Beam Quality

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Camera Analysis

Dimensions and Pin definitions

Uinte（mm）

Absolute Maximum Ratings

Item	Unit	Min	Typ	Max
Case Temperature	℃	-5	25	70
Chip Temperature	℃	+10	25	40
Operating Current	mA	0	100	120
Forward Voltage	V	0.8	1.2	1.8
TEC Current	A	-	-	1.2
Reverse Voltage（LD）	V	-	-	2.0
Reverse Voltage(PD)	V	-	-	20

Application

● Tunable diode laser absorption spectroscopy

● C₂H₆Monitoring

Ordering Info

PL-DFB-□□□□-☆-A8▽-TO39

□□□□：Wavelength

1530: 1530nm

1680: 1680nm

*****

1653.7: 1653.7nm

☆ ：Output Power

A：10mW

B：20mW

▽：Wavelength Tolerance

1：±1nm

2：±2nm

1680nm DFB Laser diode for C2H6 Sensing（TO39 Package）

Product model

Parameter

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