1653.7nm InGaAsP/lnP DFB Laser

The laser products are InGaAsP/InP based DFB LD for Methane sensing applications.These chips are processed using RWG technology.The facets are coated with an anti-reflectance coating on the front facet and a high reflectance coating on the rear facet.All laser chips come from wafers that have been certified using a representative lot of chips that must achieve an acceptable yield for chip test and dynamic test and Burn-in.

Name	Model	Description	Parameter	Price
1653.7nm InGaAsP/lnP DFB Laser [PDF] [RFQ]	LP-1654N-A09-353C0 (Stock NO. Not entered)	Center Wavelength 1653.7nm, Optical Output Power 10mW, In a TO56 uncooled package	Central wavelength: 1653.7nm Output power: 10mW Package: TO-56 Lead Time: 3-4 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1653.7nm InGaAsP/lnP DFB Laser [PDF] [RFQ]

LP-1654N-A09-353C0
(Stock NO. Not entered)

Center Wavelength 1653.7nm, Optical Output Power 10mW, In a TO56 uncooled package

Central wavelength: 1653.7nm

Output power: 10mW

Package: TO-56

Lead Time: 3-4 weeks

[Please inquire]

Call us

Parameter

Features

● For CH₄absorption spectrum wavelength.

● Low threshold current.

● High output power.

● Excellent SMSR Performance.

● RoHS Compliant.

● High reliability design

● Operating temperature:-10～55℃ .

● 100% test over temperature

● Package:TO56 (Without TEC).

E/O Characteristics

Parameter	Symbol	Unit	Conditions	Value
Parameter	Symbol	Unit	Conditions	Min	Typical	Max
Threshold Current	lth	mA	T=25℃,CW	-	-	15
Slople Efficiency	SE	mW/mA	l=lth+20mA		0.22	-
Operating Current	lop	mA	CW		50mA	-
Optical Output Power	Po	mW	I=lop	6	10	-
Center Wavelength	λo	nm	CW,I=lop	λo-0.5	λo	λo+1
Forward voltage	Vf	V	I=lop			2
Wavelength Temperature Coefficient	△N/△T	nm/℃	T=Top	-	0.1	-
Wavelength CurrentCoefficient	△N/△I	nm/mA	=lop	-	0.02	-
Side mode Suppression ratio	SMSR	dB	CW,I=lop	35	40	-
Thermistor Resistance	Rtherm	kΩ	10kΩ@25℃	-	10	-

*Parameters are tested at 25℃ unless otherwise specified.

**λo = absorption peak wavelength@65℃

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.These are absolute stress ratings only.Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet.Exposure to absolute maximum ratings of extended periods can adversely affect device reliability.

Parameter	Unit	Conditions		Value
			Min	Typical	Max
Operation temperature	℃	-	-10	-	55
Storage temperature	℃	-	-40	-	85
Optical output power	mW	CW	-	-	20
Laser reverse voltage	V	-		-	2
Laser forward current	mA	-	-	-	100

Dimensions and Pin definitions

Unit（mm）

PIN No	Definition
1	Heater(+)
2	Thermistor(+)
3	LD(-)
4	Case
5	LD(+)

*It can be formulated according to customer's requirements.

Application

● Methane Sensing

1653.7nm InGaAsP/lnP DFB Laser

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Parameter

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