The PL-UWB-SLD-1550-B-A81-2-PA is a broadband SLED that operates in a true inherent superluminescent mode. This 1550nm Superluminescent laser diode property generates broader band at higher drive currents in contrast to other conventional SLEDs which are ASE-based, where high drive tends to give narrower band. Its low coherence reduces Rayleigh backscattering noise. Coupled with high power and large spectral width, it offsets photoreceiver noise and improves spatial resolution (in OCT) and measurand sensitivity (in sensors). The SLED is available in Chip on submount package. It is compliance with the requirements of Bellcore Document GR-468-CORE.
Electro-Optical Characteristics:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Threshold Current | Ith | Tc=25℃&CW | -- | 17 | 50 | mA |
Optical Output Power | P | Tc=25℃&CW I=600mA | 15 | 20 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW | -- | 1 | -- | Ohm |
Wavelength | λp | Tc=25℃&CW I=600mA | 1530 | 1550 | 1570 | nm |
Spectrum modulation | R | Tc=25℃&CW I=600mA |
|
| 0.45 | dB |
PER(PM Version) | -- | Tc=25℃ |
| 18 |
| dB |
Bandwidth | BFWHM | Tc=25℃&CW I=600mA | 70 | 90 | -- | nm |
Pigtail parameters
Fiber Type | SM15-PS-U25D |
Mode Field Diametera | 10.5 ± 0.5 µm @ 1550nm |
Numerical Aperture | 0.12 |
Fiber Length | 1.0m |
Connector | FC/APC (2.0 mm Narrow Key) |
Jacket | Ø900 µm |
Maximum rating values
Parameters | Typical value | unit |
Power in fiber | 20 | mW |
Max Driving Current | 600 | mA |
LD Reverse Voltage | 2 | V |
PD Reverse Voltage | 15 | V |
Operation case temp | 0 to 50 | °C |
Storage Temp | -10 to 65 | °C |
TEC Current | 2.5 | A |
TEC Voltage | 4.0 | V |
Thermistor Resitance value | 10 | kohms |
Spectrum
L-I Curve
PER Value testing（PM Version）
spectral ripple@0.1res 30mW
Absolute maximum ratings*：
Parameter | Symbol | Min. | Max. | Unit |
Storage Temperature | Ts | -40 | 85 | ℃ |
Forward current | If | -- | 600 | mA |
Forward power** | Pf | -- | 100 | mW |
Reverse Voltage | VR | -- | 2 | V |
ESD(HBM) | ESD | -- | 500 | V |
*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.
1550nm High power Ultra wideband SLD semiconductor Laser diode.pdf
