Features
● Crystal growth technology,
● Output power >15mW
● 3dB bandwidth >90nm
● Chip on submount package
● Single-mode
● Edge-emitting
● Cost effective
Laser Specifications
Electro-Optical Characteristics:
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Threshold Current | Ith | Tc=25℃&CW | -- | 17 | 50 | mA |
Optical Output Power | P | Tc=25℃&CW I=600mA | 15 | 20 | -- | mW |
Series Resistance | Rs | Tc=25℃&CW | -- | 1 | -- | Ohm |
Wavelength | λp | Tc=25℃&CW I=600mA | 1530 | 1550 | 1570 | nm |
Spectrum modulation | R | Tc=25℃&CW I=600mA |
|
| 0.45 | dB |
PER(PM Version) | -- | Tc=25℃ |
| 18 |
| dB |
Bandwidth | BFWHM | Tc=25℃&CW I=600mA | 70 | 90 | -- | nm |
Pigtail parameters
Fiber Type | SM15-PS-U25D |
Mode Field Diametera | 10.5 ± 0.5 µm @ 1550nm |
Numerical Aperture | 0.12 |
Fiber Length | 1.0m |
Connector | FC/APC (2.0 mm Narrow Key) |
Jacket | Ø900 µm |
Maximum rating values
Parameters | Typical value | unit |
Power in fiber | 20 | mW |
Max Driving Current | 600 | mA |
LD Reverse Voltage | 2 | V |
PD Reverse Voltage | 15 | V |
Operation case temp | 0 to 50 | °C |
Storage Temp | -10 to 65 | °C |
TEC Current | 2.5 | A |
TEC Voltage | 4.0 | V |
Thermistor Resitance value | 10 | kohms |
Spectrum
L-I Curve
PER Value testing（PM Version）
spectral ripple@0.1res 30mW
Absolute maximum ratings*：
Parameter | Symbol | Min. | Max. | Unit |
Storage Temperature | Ts | -40 | 85 | ℃ |
Forward current | If | -- | 600 | mA |
Forward power** | Pf | -- | 100 | mW |
Reverse Voltage | VR | -- | 2 | V |
ESD(HBM) | ESD | -- | 500 | V |
*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.
Ordering Info
LP-UWB-SLD- □□□□-☆-A8▽-□□- XX
□□□□: Wavelength
1550: 1550nm
*****
1650: 1650nm
☆ : Pin Definition
A: Telecom A
B: Pump B
▽: Bandwidth
1:＞90nm
2:＞60 nm
3:＞30 nm
□□:Power
1:＞10mW
2:＞20mW
XX: Fiber and Connector Type
SA=SMF-28E+ FC/APC
SP=SMF-28E+ FC/PC
PA=PM1550 Fiber+ FC/APC
PP=PM1550 Fiber+ FC/PC
ESD and EOS:
Switching transients can cause electrical overstress (EOS) damage in a chip.
EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
● Proper turn-on sequence:
a. All ground connections
b. Most negative supply
c. Most positive supply
d. All remaining connections
● Reverse order to turn-off.
Laser Safety:
Caution: Use of controls, adjustments and procedure other than those specified herein may result in hazardous laser radiation exposure.
a. To assure long and stable operation, use the product in a hermetically sealed package with inert-gas atmosphere.
b. To protect the chip, perform opening and other work in a dustproof environment, such as a clean room at a clean bench, where workers should wear masks.
c. Never touch the internal chip when handling and use clean washed tweezers for handling the carrier part.
d. Always confirm the chip front and back orientation and the polarity in accordance with the specifications and inspection results. Using a tester to confirm the polarity may damage the LD.
e. Cleaning the chip using ultrasonic waves may cause damage.
