5mm InGaAs Photodiode


Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO8 Package

Part Number  :  PL-1700-IG-AR5-TO8
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80042008
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Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5 mm in diameter. Planar-passivated device structure.


Tsub=25°C, CW bias unless stated otherwise

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

-

900~1700

nm

Active diameter

φ

-

5000

um

Reponsivity

Re

λ=1.31µm,VR=5V,Pin=10µw

0.75



A/W

λ=1.55µm,VR=5V,Pin=10µw

0.80



Reverse breakdown voltage

VBR

I R =10µA

20



V

Dark current

ID

VR =5V



200

nA

Total capacitance

C

VR =5V f=1MHz



1.5

nF

Shunt impedance

RSh

VR =10mV

1




Typical characteristical curve

2345截图20180610152617_副本.png

Application electric circuit 

5b73815e9f414.png

Dimensions and Pin definitions

97718980AE3FC812491CDE4451B08064.png

1FCC5D4BDCF4C0C68B4FB7791C0E820D.png

Absolute Maximem Ratings

Operating voltage

10V

Operating temperature

-50~+100℃

Power dissipation

100mW

Forward current

10mA

storage   temperature

-55~+125℃

Soldering   temperature

260℃(10s


Related



Name Model Price
3mm InGaAs Photodiode [PDF]

PL-1700-IG-AR3-TO5

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