Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO8 Package
Part Number : PL-1700-IG-AR5-TO8 |
Unit Price : USD [Please inquire] |
Lead time : in stock |
Inventory quantity : [Please inquire] |
Stock NO. : E80042008 |
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Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5 mm in diameter. Planar-passivated device structure.
Tsub=25°C, CW bias unless stated otherwise
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 900~1700 | nm | ||
Active diameter | φ | - | 5000 | um | ||
Reponsivity | Re | λ=1.31µm,VR=5V,Pin=10µw | 0.75 | A/W | ||
λ=1.55µm,VR=5V,Pin=10µw | 0.80 | |||||
Reverse breakdown voltage | VBR | I R =10µA | 20 | V | ||
Dark current | ID | VR =5V | 200 | nA | ||
Total capacitance | C | VR =5V f=1MHz | 1.5 | nF | ||
Shunt impedance | RSh | VR =10mV | 1 | MΩ |
Typical characteristical curve
Application electric circuit
Dimensions and Pin definitions
Absolute Maximem Ratings
Operating voltage | 10V | Operating temperature | -50~+100℃ | Power dissipation | 100mW |
Forward current | 10mA | storage temperature | -55~+125℃ | Soldering temperature | 260℃(10s) |