3mm InGaAs Photodiode


Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO5 Package

Part Number  :  PL-1700-IG-AR3-TO5
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80042007
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Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 900 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Tsub=25°C, CW bias unless stated otherwise

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

900~1700

nm

Active diameter

φ

3000

µm

Reponsivity

Re

VR=5V,λ=1.31µm,Pin=10µw

0.80



A/W

VR=5V,λ=1.55µm,Pin=10µw

0.85



Max linear power

Φs

VR =5V,λ=1.55µm

10



mW

Response time

tS

VR=5V,RL=50Ω, f=1MHz



40

ns

Total capacitance

C

VR=5V,f=1MHz


300


pF

Dark current

ID

VR=5V


10

100

nA

Shunt impedance

Rsh

VR=10mV


1


M

Reverse breakdown   voltage

VBR

IR=10µA

20



V



Typical characteristical curve

2345截图20180610152617_副本.png

P-I Curve

0000.png


Application electric circuit 

5b73815e9f414.png

Dimensions and Pin definitions

t1.png

t2.png

1

P +

2

N-

3

GND


Absolute Maximem Ratings

Operating voltage

10V

Operating temperature

-50~+100℃

Power dissipation

100mW

Forward current

10mA

storage   temperature

-55~+125℃

Soldering   temperature

260℃(10s


Related



Name Model Price
5mm InGaAs Photodiode [PDF]

PL-1700-IG-AR5-TO8

[Please inquire]

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