Response wavelngth 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 16mm, Photosensitive material Si
Part Number : PL-1100-SI-QD16-TO |
Unit Price : USD [Please inquire] |
Lead time : [Please inquire] |
Inventory quantity : [Please inquire] |
Stock NO. : E80040004 |
Email Us Request for Quotation |
PL-1100-SI-QD16-TO SI Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1100 nm. The photosensitive area is 16mmx4 in diameter. Planar-passivated device structure.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters | Symbol | Test Condition (TA=22℃±3℃) | Value | Unit | ||
Min | Max | |||||
Response(AC)(Quadrant) | Spi | λ=1.064μm VR=135 V | Pulse Width 20 ns、Pin=2 mW | 0.25 | — | A/W |
Response(DC)(Quadrant) | Rei | DC、Pin=1μw | 0.30 | — | ||
Response variation (DC) (Quadrant)a Response variation (AC) (Quadrant)a | ΔRei | TA=-45 ℃±2 ℃ | — | 50 | % | |
Dark Current(Quadrant) | IDi | VR=135V Pin=0μw | TA=22℃±3℃ | — | 1 | μA |
TA=70℃±3℃ | — | 10 | ||||
Dark Current(RING) | ID | TA=22℃±3℃ | — | 10 | ||
TA=70℃±3℃ | — | 100 | ||||
Junction capacitance(Quadrant) | Cji | VR=135V,f=1MHz | — | 15 | pF | |
Active Area Diameter | φ | 10 | 16 | mm | ||
Equivalent noise power | NEPi | λ=1.064 μm,VR=135 V ,Pulse Width 20 ns | — | 5×10-12 | W/HZ1/2 | |
Breakdown voltage(Quadrant、Ring) | VBR | IR=10μA | 200 | — | V | |
Nonuniformity of sensitivity between pixels | Rf | λ=1.064 μm,VR=135 V ,Pulse Width 20 ns;Pin=2mW | — | 5 | % | |
Nonuniformity of sensitivity in pixels | Rfn | λ=1.064 μm,VR=135 V ,Pulse Width20 ns;Pin=2mW | — | 5 | % | |
Crosstalk Factor between pixels | SLi | λ=1.064 μm,VR=135 V ,Pulse Width 20 ns;Pin=2mW | — | 5 | % |
Typical characteristical curve