10mm SI Quadrant PIN Detector


Response wavelength 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 10mm, Photosensitive material Si

Part Number  :  PL-1100-SI-QD10-TO
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80040002
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PL-1100-SI-QD10-TO SI Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1100 nm. The photosensitive area is 10mmx4 in diameter. Planar-passivated device structure. 

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters

Symbol

Test Condition

TA=22±3℃)

Value

Unit

Min

Max

Response(AC)(Quadrant)

Spi

λ=1.064μm

VR=135 V

Pulse Width 20 nsPin=2 mW

0.25

A/W

Response(DC)(Quadrant)

Rei

DCPin=1μw

0.30

Response variation (DC) (Quadrant)a

Response variation (AC) (Quadrant)a

ΔRei

TA=-45 ±2 

50

%

Dark Current(Quadrant)

IDi

VR=135V

Pin=0μw

TA=22±3

1

μA

TA=70±3

10

Dark Current(RING)

ID

TA=22±3

10

TA=70±3

100

Junction capacitanceQuadrant

Cji

VR=135Vf=1MHz

15

pF

Active Area Diameter

φ


10

16

mm

Equivalent noise power

NEPi

λ=1.064 μmVR=135 V ,Pulse Width 20 ns

5×10-12

W/HZ1/2

Breakdown voltageQuadrantRing

VBR

IR=10μA

200

V

Nonuniformity of sensitivity between   pixels

Rf

λ=1.064 μmVR=135 V Pulse Width 20   nsPin=2mW

5

%

Nonuniformity of sensitivity in pixels

Rfn

λ=1.064 μmVR=135 V Pulse Width20   nsPin=2mW

5

%

Crosstalk Factor between pixels

SLi

λ=1.064 μmVR=135 V Pulse Width 20   nsPin=2mW

5

%


Typical characteristical curve

tcq.png


Related



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16mm SI Quadrant PIN Detector [PDF]

PL-1100-SI-QD16-TO

[Please inquire]

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