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Home / Laser diode / VCSEL Laser Diode / 794.7nm SM VCSEL Laser diode for Rb Atom D1 Line CPT

794.7nm SM VCSEL Laser diode for Rb Atom D1 Line CPT

PL -VCSEL-0795-1-A8X-TO46 794.7nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO5 can. Wavelength tuning can be achieved via laser current and temperature tuning. package with TEC and PD Built in. It is special designed for TDLAS Application. Good Narrow linewidth and wide tunability with TEC made it a great low cost choice for Rubidium Spectroscopy D1 transition.

Name Price Operation
794.7nm SM VCSEL Laser diode Without TEC $1200.00
794.7nm SM VCSEL Laser diode with TEC $1800.00
Features

● Vertical Cavity Surface-Emitting Laser

● Internal TEC and Thermistor, ESD protection

● Narrow linewidth

● 2 nm tunability with TEC

● Selection for Rubidium D1 transition

E/O Characteristics

Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)

Parameters

Symbol

Min

Typ

Max

Unit

Remark

Emission Wavelength

λR

794.7nm

Threshold current

ITH


0.5


mA


Output Power

Popt

0.25



mW


Threshold Voltage

UTH


1.8


V


Driving Current

IOP



2

mA

Popt = 0.3 mW

Laser voltage

UOP


2


V

Popt = 0.3 mW

Electro optic conversion   rate

ηWP


12


%

Popt = 0.3 mW

Slope efficiency

ηS


0.3


W/A


Differential series resistance

RS


250


Ω

Popt = 0.3 mW

3dB bandwidth

ν3dB

0.10



GHz

Popt = 0.3 mW

Due to ESD protection diode

Relative intensity noise

RIN


-130

-120

dB/Hz

Popt = 0.3 mW @ 1     GHz

Wavelength tuning over current



0.6


nm/mA


Wavelength tuning over temperature



0.06


nm/K


Thermal resistance (VCSEL   chip)

Rthermal

3


5

K/mW


Side mode supression


25



dB

I  = 2 mA

Beam divergence

θ

10


25

°

Popt = 0.3 mW, full width 1/e2

Spectral Width



100


MHz

Popt = 0.3 mW


Tec Characteristics

Unit

Min

Typ

Max

Remark

Tec Current

mA

-150(Heating)


+300(Cooling)

Proper Heart Sink   Required

NTC Thermistor Resistance

9.5

10.0

10.5

T=25@10 KΩ

NTC Thermistor Resistance

10/exp{3892-(1/289K-I/TOP)}


Spectrum

491.png

L-I Curve(T@25°C)

492.png

Temperature / wavelength tuning over TEC current*

493.png

Fabry Perot Spectrum  

494.png

Package Size

495.png

                           (Dimensions Unit in: mm)

Pin definition

496.png

Bottom View

1

Thermistor-

4

NTC   Thermistor -Laser Cathode (-)

2

Thermistor+

5

Laser   Anode (+)

3

NTC   Thermistor +10kΩ at 25°C




Absolute Maximum Ratings

Item

Symbol

Unit

Min

Typ

Max

Testing Condition

Chip Temperature

TOP

 

+10

25

40


Forward Voltage

VR

V

0.8

1.2

1.8


Electrical Power Dissipation

Pc

mw


-

5


TEC Forward Current

IPF

mA

-150

-

+300


Lead Soldering time


S


-

10s

260

Store Temperature

TSTG

-40

-

+85

2000hr

Operating Temperature

TOP

-55

-

+125


(*TEC temperature must be below 150°C)

Application

● Tunable diode laser absorption spectroscopy

● Rubidium Spectroscopy

● Optical Clock (Rubidium)

OEM Info

PL -VCSEL-□□□□-☆-A8▽-XX

□□□□:Wavelength

0760:760nm

0795:794.7nm

*****

1653.7:1653.7nm

☆ :TEC

0:Without TEC

1:With TEC

▽:Wavelength Tolerance

1:±0.5nm

2:±1.5nm

XX: Package

TO46


User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.