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Home / Photodiode / InGaAs Photodiode / 800nm~3600nm 300μm InGaAs PIN Photodiode TO46 Package

800nm~3600nm 300μm InGaAs PIN Photodiode TO46 Package

InGaAs photodiodes offer superb response from 900nm to 3600nm, perfect for telecom and near IR detection. The 300 and 1000 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling. These two sizes are also available with actively aligned FC receptacles. Photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 1mm photodiode is suitable for high sensitivity to weak signal.

Name Price Operation
300um InGaAs PIN Photodiode TO46
[Explore More]
$480.00
 
Features

● High reliability, low dark current.

● 800-3600nm spectral range.

● Active diameter 0.3mm.

● Hermetic package TO46 Can。

● Receptacle or with fiber coupling Optional

E/O Characteristics

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Unit

Typical Value

Active diameter

Φ

mm

0.3

Spectral range

λ

nm

800-3600

Responsivity

Re (VR=-0.2V, λ=800nm)

mA/mW

0.08

Re (VR=-0.2V, λ=3000nm)

mA/mW

1.0

Re (VR=-0.2V, λ=3600nm)

mA/mW

0.2

Response time

Tr (RL=50Ω,VR=-0.2V)

ns

40

Dark current

Id (VR=-0.2V)

uA

250

Reverse Breakdown voltage

VBR (IR=10μA)

V

1

Junction capacitance

Cj (f=1MHz, VR=-0.2V)

pF

20

Saturated Optical Power

Ps(VR=-0.2V)

mW

2

Operating voltage

VR

V

0-0.2

Package

Hermetic package TO46 Can or with   receptacle or fiber coupling.


Typical characteristical curve

Responsivity, R (A/W)

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P-I Curve

cc68f140-4fe7-4e6c-9164-b158790bd21a.jpg

Application electric circuit


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Dimensions and Pin definitions

754.png


755.jpg

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Absolute Maximem Ratings

Parameter

Symbol

Value

Unit

Operating temperature

Top

-20+50

Storage temperature

Tstg

-55+70

Forward current

If

10

mA

Reverse Voltage

Vr

1

V

Reverse current

Ir

1

mA

Soldering temperature(time)

Ts10s

260

Application

● CATV

● Optical

● transmission

● Optical fiber communication

● Optical fiber Sensors

Ordering Info

PL-☆-AR▽-W□□□□-XX

☆ :Material

IG:InGaAs

Si:Si

▽:Active Area

0080:80um

1:1mm

□ □□□:Cut off Wavelength

400:400nm

900:900nm

1700:1700nm

2100:2100nm

2400:2400nm

2700:2700nm

3600:3600nm

XX: Package/Fiber and Connector Type

TO:TO46 Package

FPG:FC/PC Plugged


User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.