Φ200μm InGaAs APD Chip


InGaAs Avalanche Photodiode (APD) chips are semiconductor devices that are designed to detect weak optical signals in the infrared region. They are used in a variety of applications, such as fiber optic communications, LIDAR, and sensing. An APD is a type of photodiode that incorporates an internal gain mechanism, which allows it to achieve higher sensitivity than a standard photodiode. The gain is achieved through a process called avalanche multiplication, where a single photon creates an electron-hole pair, which then undergoes impact ionization, producing additional electron-hole pairs. This process results in an amplified output signal. InGaAs APDs are particularly useful for detecting wavelengths between 800 and 1700 nm.LD-PD INC is a company who design and manufacture InGaAs APD Chips.



Product model


Name Model Price
InGaAs Φ 200μm APD Chip   [PDF]  [RFQ]

LP-APD200
(Stock NO. Not entered)
[Please inquire]


Parameter



E/O Characteristics

Electro-Optical Characteristics (@ Tc=22±3℃)

Parameter

Symbol

Test   Condition

Min.

Typ.

Max.

Unit

Response Spectrum

λ

950 ~ 1700

nm

Responsivity

Re

λ=1550nm

Pin=1μW,  M=1

0.90

1.00

A/W

Multiplication factor

M

λ=1550nm

Pin=1μW, VR=VBR-3

10.00


λ=1550nm

Pin=1μW, VR=VBR-1

30.00

Dark Current

Id

VR=VBR-3, Pin=0μW

8.00

50.00

nA

-3dB Cut-off frequency

BW

M=10

RL=50Ω

0.60

1.25

GHz

Reverse Breakdown Voltage

VBR

I=10μA, Pin=0μW

35.00


50.00

V

Capacitance

C

VR=VBR-3, f=1MHz

1.80

2.00

pF

Temperature Coefficient of VBR

γ

IR=10μA,  Pin=0μW

-55~+85

0.07

0.11

0.15

V/℃


Absolute Maximum Rating

Parameter

Symbol

Min.

Max.

Unit

APD Voltage supply

VPD

VBR

V

Operating Temperature

TC

-40

+85

⁰C

Storage Temperature

TSTG

-55

+125

⁰C

Forward Current

IF

5

mA

Reverse Current

IR

3

mA


Typical Performance Curves  (@ Tc=22±3℃)

APD2.jpg


APD3.jpg


Outline Diagram and Die Dimensions


APD5.jpg

Parameter

Min.

Typ.

Max.

Unit

Notes

Die Width

375

385

395

µm


Die Length

375

385

395

µm


Thickness

115

125

135

µm


Detection Window

200

µm


Bonding Pad Diameter

80

µm

Au metal

Application

● Distance measurement 

● Spatial light transmission 

● OTDR 

● Low-light-level detection



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