1310nm Low DOP SLD Chip   2022-05-06    


1310nm Superluminescent Diodes bridge the gap between Laser Diodes and Light Emitting Diodes.Like an LD, the SLD provides a high optical output power. LD-PD's SLD feature broadband spectrum characteristics, typically found only in LEDs, and a low coherence. Our SLD features a low coherence length having a high intensity at a narrow radiation angle. This makes the SLD much easier to couple to a fiber for a broad range of applications.


Product model



Name Model Price
1310nm Low DOP SLD Chip  [PDF]  [RFQ]

SLD-CHIPS-A-A82-W1310
Stock NO.: I80013001
USD 80.00 
 


Parameter



Features

● Central wavelength 1290 ~ 1330nm

● Spontaneous emission light source, low ripple

● Wide spectral light source, spectral width > 40nm

● Low polarization extinction ratio

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Centre wavelength

λc

1290

1310

1330

nm

100mA 25℃

Operation Current

Iop

-

100

150

mA

100mA 25℃

Optical Output Power

Pf

1.6

2.3

2.7

mW

100mA 25℃

Spectral Width

Δλ

40

50

-

nm

100mA 25℃

Spectral power variation (ripple)

R

-

0.1

0.2

dB

100mA 25℃

Polarization dependent output(TE/TM)

-

-

-

1.0

dB

100mA 25℃


Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 320℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤10%

Package Size

111.jpg

Parameter

Symbol

Units

Min

Max

Storage Temperature

TS

°C

-40

100

Forward current

IF

mA

-

150

Forward voltage

VF

V

-

+3

Reverse voltage

VR

V

-

+2

Maximum   Chip-on-carrier Solder Temperature

-

-

320

Note:

1.Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely


Application

● Fiber optic gyroscope

● Optical coherence tomography

● Optical testing instrument

● Optical fiber communication

Ordering Info

SLD-Chips-☆-A8▽-W□□□□

☆: Output Power

A: 2mW

B: 3mW

▽: Wavelength Tolerance

1: ±5nm

2: ±10nm

□□□□: Wavelength

1310: 1310nm

*****

1315: 1315nm



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