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Home / Photodiode / Si Quadrant Photodiodes / 16mm SI Quadrant PIN Detector

16mm SI Quadrant PIN Detector

PL-1100-SI-QD16-TO SI Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1100 nm. The photosensitive area is 16mmX4 in diameter. Planar-passivated device structure. 

Name Price Operation
10mm SI Quadrant PIN Detector $800.00
16mm SI Quadrant PIN Detector $1250.00
Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant 

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters

Symbol

Test Condition

TA=22±3

Value

Unit

Min

Max

Response(AC)(Quadrant)

Spi

λ=1.064μm

VR=135 V

Pulse Width 20 nsPin=2 mW

0.25

A/W

Response(DC)(Quadrant)

Rei

DCPin=1μw

0.30

Response variation (DC) (Quadrant)a

Response variation (AC) (Quadrant)a

ΔRei

TA=-45 ±2

50

%

Dark Current(Quadrant)

IDi

VR=135V

Pin=0μw

TA=22±3

1

μA

TA=70±3

10

Dark Current(RING)

ID

TA=22±3

10

TA=70±3

100

Junction capacitanceQuadrant

Cji

VR=135Vf=1MHz

15

pF

Active Area Diameter

φ


10

16

mm

Equivalent noise power

NEPi

λ=1.064 μmVR=135 V ,Pulse Width 20 ns

5×10-12

W/HZ1/2

Breakdown voltageQuadrantRing

VBR

IR=10μA

200

V

Nonuniformity of sensitivity between   pixels

Rf

λ=1.064 μmVR=135 V Pulse Width 20   nsPin=2mW

5

%

Nonuniformity of sensitivity in pixels

Rfn

λ=1.064 μmVR=135 V Pulse Width20   nsPin=2mW

5

%

Crosstalk Factor between pixels

SLi

λ=1.064 μmVR=135 V Pulse Width 20   nsPin=2mW

5

%


Typical characteristical curve

tcq.png

Dimensions and Pin definitions

Dimension Outline

TO Type Full sealed design. Outline reference Figture1,Dimension Reference table1

5da41e096254d.png

5da41e15e2f4e.png

Table 1, Dimension (Unit in mm)

SYB

φD1

ΦD2

ΦD3

ΦD4

ΦD5

Φd

A

L1

L2

L3

e

Min

30.55

27.80

3.00

27.915

22.60

0.98

7.03

3.02

1.85

2.70

18.00

Max

30.65

28.00

3.06

27.94

23.40

1.02

7.20

3.10

1.95

3.00

18.05


PIN Output Array

Pin output array reference Figure 2,PIN Function Reference Table 2.

5da41e2756ee0.png

Table2,PIN Output Array function

PIN#

Function

Voltage polarity

1

Quadrant1

+

2

Common P polarity

-

3

Quadrant4

+

4

Ring

+

5

Quadrant3

+

6

Cell

GND

7

Quadrant2

+

Application

● Laser beam position sensor

● Autocollimators

● Optical tweezers

● Ellipsometers 

OEM Info

PL-W□□□□-☆-QD▽-XX

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1100: 1100nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

Material

IGInGaAs

SiSi

Active Area(Single element)

110mm

216mm

XX: Package/Fiber and Connector Type

TO: TO Can Package


User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

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