The PL -VCSEL-0852-1-A81-TO46 852nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO5 can. Wavelength tuning can be achieved via laser current and temperature tuning. package with TEC and PD Built in. It is special designed for TDLAS Application. Good Narrow linewidth and wide tunability with TEC made it a great low cost choice for Rubidium Spectroscopy D1 transition.
|Picture||Name||Part NO.||Description||Central wavelength||Output power||Package||Lead Time||Price||Operation|
● Vertical Cavity Surface-Emitting Laser
● Internal TEC and Thermistor, ESD protection
● Narrow linewidth
● 2 nm tunability with TEC
● Selection for Rubidium D1 transition
Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)
Popt = 0.3 mW, full width 1/e2
Temperature / wavelength tuning over TEC current*
Fabry Perot Spectrum
（Dimensions Unit in: mm）
NTC Thermistor -Laser Cathode (-)
Absolute Maximum Ratings
(*TEC temperature must be below 150°C)
● Tunable diode laser absorption spectroscopy
● Rubidium Spectroscopy
● Optical Clock (Rubidium)
PL-VCSEL- □□□□-☆-▽- XX
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.