TDLAS DFB Laser Chip   2021-06-24    


The laser is a semiconductor InGaAsP DFB laser working at the 1625nm, 1648.2nm, 1650.9nm or 1653.7 nm wavelength range. The device can be delivered in chip forms. This high performance, and high reliability laser is suitable for gas detection application.


Product model



Name Model Price
1653.7nm DFB Laser Chip  [PDF]  [RFQ]

TDLAS-DFBCHIPS-A-A81-W1653.7
Stock NO.: I80011024
USD 195.00 
 
1650.9nm DFB Laser Chip  [PDF]  [RFQ]

TDLAS-DFBCHIPS-A-A81-W1650.9
Stock NO.: I80011022
USD 195.00 
 
1648.2nm DFB Laser Chip  [PDF]  [RFQ]

TDLAS-DFBCHIPS-A-A81-W1648.2
Stock NO.: I80011020
USD 195.00 
 
1625nm DFB Laser Chip  [PDF]  [RFQ]

TDLAS-DFBCHIPS-A-A81-W1625
Stock NO.: I80011018
USD 195.00 
 


Parameter



Features

● Wide temperature range available

● High Reliability

● Multi-quantum Well (MQW) active layer

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

1625 1648.2 1650.9 1653.7nm

Side Mode Suppression Ratio

SMSR

30

40


dB

Threshold Current

Ith


5

10

mA

Operating Current

Iop


80

120

mA

Chip output Power

Pf

5.5

10

30

mW

Quantum Efficiency

η

0.08

0.12


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.3

2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


25


Deg

Beam Divergence angle (perpendicular)

ϑ


35


Deg

Resistance

Rs


8


ohm

20dB width

△λ


 1


nm

Package Size

Outline Drawing

dr.png

Note: The silk screen on the pictures is only for reference .


Absolute maximum ratings

Item

Unit

Min

Typ

Max

Case Temperature

 ℃

-5

25

70

Chip Temperature

+10

25

50

Operating Current

mA

0

80

100

Forward Voltage

V

0.8

1.2

2.0

Suggest TEC Current

A

-

-

1.2

Reverse VoltageLD

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20

Note:

1.Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely


Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%

Application

● Tunable diode laser absorption spectroscopy

● CH4 Monitoring

Ordering Info

TDLAS-DFB Chips-☆-A8▽-W□□□□

☆ :Output Power

A:5.5mW

B:20mW

▽:Wavelength Tolerance

1:±1nm

2:±2nm

□□□□:Wavelength

1625:1625nm

*****

1653.7:1653.7nm



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