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Home / New products / FP Chips / Single Mode Pump Diode Lasers, 980nm, 1500mW CW

Single Mode Pump Diode Lasers, 980nm, 1500mW CW

The laser is is a semiconductor InGaAsP FP laser working at 97Xnm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers. 

Name Price Operation
976nm FP Pump Laser chips
[Explore More]
$735.00
 
Features

● High Power(Kink off power up to 1500mw)

● High electro-optic conversion efficiency 

● High single-mode operation stability

● High reliability

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

970

976

980

nm

Spectrum Width

FWHM

-

1

2

nm

Threshold Current

Ith

60

70

80

mA

Operating Current

Iop


1500

1800

mA

Chip output Power

Pf

1500

1800


mW

Forward Voltage

Vf


1.72

1.75

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


7


Deg

Beam Divergence angl(perpendicular)

ϑ


22 


Deg

Note: These parameters were obtained by testing COS packaged products in the CW mode at 25℃.


L-I-V Curve

t1.jpg


Typical Testing Curve

FP3.jpg

Package Size

Unit (mm)

t2.png

Dimension

Symbol

Min Value

Typ Value

Max Value

Unit

Emitter Area

-


5X1

-

um

Chip width

W

380

400

420

um

Chip Length

L

4950

5000

5050

um

Chip Thickness

H

105

120

135

um


Absolute Maximum Ratings

Item

Unit

Min

Typ

Max

Case Temperature

-5

25

50

Chip Temperature

+10

25

50

Operating Current

mA

0

1800

2000

Forward Voltage

V

0.8

1.2

3.0

Back Current

uA

-

-

10

Back Voltage

V

-

-

2.0

Suggest TEC Current

A

-

-

1.2

ESD Voltage

V

1000

-

-

Reverse Voltage(PD)

V

-

-

20

Note:

1. Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.

2. These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3. Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.


Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions:

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%


Application

● Telecommunication

● Data Communication

● Storage area network

● MAN

● PON

Ordering Info

FP-Chips-☆-A8▽-W□□□□

☆ :Output Power

A:500mW

B:1500mW

▽:Wavelength Tolerance

1:±1nm

2:±2nm

□□□□:Wavelength

976: 976nm

*****

980: 980nm