1550nm FP Laser Diode Chip   2021-06-24    


The laser is is a semiconductor InGaAsP FP laser working at 1550nm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers. 


Product model



Name Model Price
1550nm FP Laser Diode Chip  [PDF]  [RFQ]

FP-Chips-A-A83-W1550
Stock NO.: I80010008
USD 0.80 
 


Parameter



Features

● lGaInAs/InP Ridge Waveguide structure 

● Excellent wavelength uniformity 

● Wide temperature range from -40 °C to 85 ℃ 

● 2.5Gb/s speed ratio application for FTTX optical network

E/O Characteristics

Parameter

Condition

Min

Typ.

Max

unit

Output Power Po

T=25℃

IOP =Ith+20mA

5.0

6.0

mW

Threshold Current Ith

T=25℃

8.5

13

mA

T=85℃

25

35

mA

Slope Efficiency SE

T=25℃

0.25

0.30

W/A

T=85℃

0.15

0.20

W/A

Center Wavelength 入o

T=25℃

IOP =Ith+20mA

1530

1550

1570

nm

Spectral Width AX (FWHM)

IOP =2XIth

3.5

nm

Backside power Pb

T=25℃

IOP =Ith+20mA

0.2

0.4

mW

Radiant Beam Angle (FWHM)

9丄丄

45

50

deg.

9

25

30

deg.

Forward Voltage Vf

Iop=50mA

1.2

1.5

V


Typical Testing Curve

2345截图20210428161625.jpeg

2345截图20210428161650.jpeg

Package Size

Unit (mm)

746e7591-ebf6-49e0-a9e4-a42a7e42d5b4.jpg


Parameter

Symbol

Min.

Max.

Unit

Operating temperature

TC

-40

+85

Storage temperature

Tst

-40

+125

Output power

P max


20

mW

Reverse voltage

VR


-2

V

Forward current

IF


150

mA

ESD Voltage

≥500

V

Application

● Telecommunication

● Data Communication

● Storage area network

● MAN

● PON

Ordering Info

FP-Chips-☆-A8▽-W□□□□

☆ :Output Power

A:6mW

▽:Wavelength Tolerance

1:±1nm

2:±2nm

3:±3.5nm

□□□□:Wavelength

974: 974nm

*****

980: 980nm

1550: 1550nm



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