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Home / New products / FP Chips / 97x High Power FP Laser Chip for EDFA

97x High Power FP Laser Chip for EDFA

The laser is is a semiconductor InGaAsP FP laser working at 974nm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers. 

Name Price Operation
976 High Power FP Laser Chip
[Explore More]
$135.00
 
Features

● High Power(Kink off power up to 700mw)

● Chip size:3000um x 400um x 120um

● High Reliability

● Multi-quantum Well (MQW) active layer 

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

971

974

977

nm

Spectrum Width

FWHM

-

1

2

nm

Threshold Current

Ith


50

70

mA

Operating Current

Iop


570

650

mA

Chip output Power

Pf

450

500


mW

Forward Voltage

Vf


2.0

2.2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel half angle)

ϑ//


40


Deg

Beam Divergence angle (perpendicular half angle)

ϑ


8


Deg


Typical Testing Curve

FP2.png

FP3.jpg

Package Size

Unit (mm)

FP1.jpg

Dimension

Symbol

Min Value

Typ Value

Max Value

Unit

Emitter Area

-


5X1

-

um

Chip width

W

380

400

420

um

Chip Length

L

2990

3000

3010

um

Chip Thickness

H

105

120

135

um


Absolute Maximum Ratings

Item

Unit

Min

Typ

Max

Case Temperature

-5

25

50

Chip Temperature

+10

25

50

Operating Current

mA

0

800

1000

Forward Voltage

V

0.8

1.2

2.0

Back Current

uA

-

-

10

Back Voltage

V

-

-

2.0

Suggest TEC Current

A

-

-

1.2

ESD Voltage

V

1000

-

-

Reverse Voltage(PD)

V

-

-

20

Note:

1. Stresses which exceed the absolute maximum ratings can cause permanent

damage to the device.

2. These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3. Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.


Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions:

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%

Application

● Telecommunication

● Data Communication

● Storage area network

● MAN

● PON

Ordering Info

FP-Pump Chips-☆-A8▽-W□□□□

☆ :Output Power

A:500mW

▽:Wavelength Tolerance

1:±1nm

2:±2nm

□□□□:Wavelength

974:974nm

*****

980:980nm