850 nm single-mode VCSELs are the perfect choice for demanding sensor applications due to their improved optical characteristics. Higher-order longitudinal and transversal modes are suppressed by the innovative chip design; at the same time, the polarization is linearly stable.
Picture
Name
Part NO.
Description
Central wavelength
Output power
Package
Lead Time
Price
Operation
Features
● Low dependence of electrical and optical characteristics over temperature
● Data rates from OC-3 to OC-48
● Vertical Cavity Surface-Emitting Laser
● Internal TEC and Thermistor, ESD protection
● Narrow linewidth
● 2 nm tunability with TEC
E/O Characteristics
Condition:TO P = 20°C, IO P = 10.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)
Parameters
Symbol
Min
Typ
Max
Unit
Remark
Emission Wavelength
λR
850nm
Threshold current
ITH
1
mA
Output Power
Popt
0.5
1
mW
Threshold Voltage
UTH
1.8
V
Driving Current
IOP
3
mA
Popt = 0.5mW
Laser voltage
UOP
3
V
Popt = 0.5 mW
Electro optic conversion rate
ηWP
12
%
Popt = 0.5 mW
Slope efficiency
ηS
0.3
W/A
Rise and Fall time
Tr /Tf
90/120
Psec
Differential series resistance
RS
100
200
Ω
Popt = 0.5 mW
3dB bandwidth
ν3dB
0.10
2.5
GHz
Popt = 0.5 mW
Due to ESD protection diode
Relative intensity noise
RIN
-130
-120
dB/Hz
Popt = 0.3 mW @ 1 GHz
Wavelength tuning over current
0.6
nm/mA
Wavelength tuning over temperature
0.06
nm/K
Thermal resistance (VCSEL chip)
Rthermal
3
5
K/mW
Side mode supression
35
dB
I = 2 mA
Beam divergence
θ
10
25
°
Popt = 0.5mW,full width 1/e2
Spectral Width
100
MHz
Popt= 0.5 mW
Tec Characteristics
Unit
Min
Typ
Max
Remark
Tec Current
mA
-150(Heating)
+300(Cooling)
Proper Heart Sink Required
NTC Thermistor Resistance
KΩ
9.5
10.0
10.5
T=25℃@10 KΩ
NTC Thermistor Resistance
KΩ
10/exp{3892-(1/289K-I/TOP)}
Spectrum
L-I Curve(T@25°C)
Temperature / wavelength tuning over TEC current*
Beam Quality Profiler (2D/3D)
2D
3D
Beam profile
In the far field, the intensity distribution of the single-mode VCSEL is perfectly Gaussian shaped
