1550 High Power DFB Laser Chip for DWDM   2021-06-24    


The laser is is a semiconductor InGaAsP DFB laser working at 1550nm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers. 

QQ图片20191217155550.png


Product model



Name Model Price
1550nm DWDM DFB Chips  [PDF]  [RFQ]

DWD-DFBCHIPS-A-A81-W1550
Stock NO.: I80011008
USD 265.00 
 


Parameter



Features

● High Power

● Low RIN

● Narrow Linewidth

● High Reliability

● Multi-quantum Well (MQW) active layer 

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

1545

1550

1555

nm

Side Mode Suppression Ratio

SMSR

35

40


dB

Threshold Current

Ith


20

40

mA

Operating Current

Iop


400

500

mA

Chip output Power

Pf

60

100


mW

Quantum Efficiency

η

0.2

0.3


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.3

2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


20


Deg

Beam Divergence angle (perpendicular)

ϑ


25


Deg

Resistance

Rs


8


ohm

Linewidth width

λ


200


KHZ


Symbol

Parameter

Test   Conditions

Min.

Typ.

Max.

Unit

Im

Threshold   Current

CWT=25°C


20

40

mA

Po

Output Power

CWlth+20mA, T=25°C

4

6


mW

CW, Ith +   400 mA, T=25 °C, TEC controlled.

60

100


SE

Slope Efficiency

CW, Ith + 20   mA, T=25 °C

0.2

0.3


W/A

Vop

Operating Voltage

CW, Ith + 20   mA


1.2

1.5

V

CW, Ith + 400 mA, TEC controlled


2.5

3.5

υ

Linewidth

CW, Ith + 300 mA, TEC controlled


200

1000

KHz

RIN

Relative Intensity Noise

CW, Ith +   300 mA, TEC controlled, @1GHz


-160

-155

dB/Hz

λc

Center Wavelength

CW, Ith + 20   mA

1545

1550

1555

nm

SMSR

Side Mode Suppression

Ration

CW, Ith + 20   mA

35

40


dB

ϑ//

Beam Divergence Angle (parallel)

CW, Ith + 20   mA


20


Deg.

ϑ

Beam Divergence Angle (perpendicular)

CW, Ith + 20   mA


25


Deg.


Handling Procedures

1.Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2.Suggested burn-in conditions:

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%


Outline Drawing

dr.png

Absolute maximum ratings

Item

Unit

Min

Typ

Max

Case Temperature

-5

25

70

Chip Temperature

+10

25

50

Operating Current

mA

0

400

500

Forward Voltage

V

0.8

1.2

2.0

Suggest TEC Current

A

-

-

1.2

Reverse VoltageLD

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20

Note:

1.Stresses which exceed the absolute maximum ratings can cause permanent

damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.

Application

● Telecommunication

● Data Communication

● Storage area network

● MAN

● PON

Ordering Info

TDLAS-DFB Chips-☆-A8▽-W□□□□

Output Power

A50mW

B100mW

Wavelength Tolerance

1±1nm

2±2nm

□□□□: Wavelength

1545: 1545nm

*****

1555: 1555nm



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