O band High power distributed-feedback laser diode Chips   2022-02-19    


The laser diode with a period grating provides a high side-mode suppression ratio (SMS) over a wide temperature range. In order to achieve the high bias injection efficiency and low leakage current,waveguide stripe is applied for current confinement. The waveguide stripes, including multiple quantum wells (MQWs) active layers and period grating for low threshold current, high slope efficiency and high temperature characteristic (TO) design.

The laser diode with alignment mask and broad-area metal pad on the p-side is designed for p-side down mounting process. The continue-wave DC characteristic over wide temperature range of laser chips have been verified and validated repeatedly.


Product model



Name Model Price
1310nm High power DFB laser diode Chips  [PDF]  [RFQ]

DWD-DFBCHIPS-A-A81-W1310
Stock NO.: I80011006
USD 125.00 
 


Parameter



Features

Small Far-Field Beam:

● Vertical and horizontal far field angle are 20 degree in typical.

Lower Power Consumption:

● The typical power consumption for 50 mW output power under 75deg

● operation temperature is below 350 mW.

High Optical Power at High Temperature:

● Up to 50 mW optical output power under 250 mA bias and 75°C operation.

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

1306

1310

1316

nm

Side Mode Suppression Ratio

SMSR

35

45


dB

Threshold Current

Ith


20

40

mA

Operating Current

Iop


230

250

mA

Chip output Power

Pf

50

70


mW

Quantum Efficiency

η

0.2

0.3


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.3

2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


19


Deg

Beam Divergence angle (perpendicular)

ϑ


17


Deg

Resistance

Rs


8


ohm

Linewidth width

λ


3


MHZ


Symbol

Parameter

Test   Conditions

Min.

Typ.

Max.

Unit

Im

Threshold Current

CWT=25°C


20

40

mA

Po

Output Power

CWlth+20mA, T=25°C

4

6


mW

CW,   Ith + 200 mA, T=25 °C, TEC controlled.

50

80


SE

Slope Efficiency

CW,   Ith + 20   mA, T=25 °C

0.2

0.3


W/A

Vop

Operating Voltage

CW,   Ith + 20   mA


1.2

1.5

V

CW,   Ith + 200 mA, TEC controlled


2.5

3.5

υ

Linewidth

CW,   Ith + 200 mA, TEC controlled


3

10

MHz

RIN

Relative Intensity Noise

CW,   Ith +   200 mA, TEC controlled, @1GHz


-150

-145

dB/Hz

λc

Center Wavelength

CW, Ith + 20 mA

1306

1310

1316

nm

SMSR

Side Mode Suppression

Ration

CW, Ith + 20 mA

35

40


dB

ϑ//

Beam Divergence Angle (parallel)

CW, Ith + 20 mA


19


Deg.

ϑ

Beam Divergence Angle (perpendicular)

CW, Ith + 20 mA


17


Deg.


Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%


Package Size

Outline Drawing

O1.png


Absolute maximum ratings

Item

Unit

Min

Typ

Max

Case Temperature

 ℃

-5

25

70

Chip Temperature

+10

25

50

Operating Current

mA

0

400

500

Forward Voltage

V

0.8

1.2

2.0

Suggest TEC Current

A

-

-

1.2

Reverse VoltageLD

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20

Note:

1.Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely

Application

● Telecommunication

● Data Communication

● Storage area network

● MAN

● PON

Ordering Info

TDLAS-DFB Chips-☆-A8▽-W□□□□

☆: Output Power

A: 50mW

B: 100mW

▽: Wavelength Tolerance

1: ±1nm

2: ±2nm

□□□□: Wavelength

1306: 1306nm

*****

1316: 1316nm



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