PD1000 InGaAs Photodiode Chip 2021-10-25

LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

Name	Model	Description	Parameter	Price
PD1000 InGaAs Photodiode Chip [PDF] [RFQ]	PD1000 Stock NO.: I80030007	Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1290μm×1290μm （Min Order:100PCS）	Response wavelngth: 1000-1680nm Material: InGaAs Active area: 1000um Lead Time: in stock	USD 12.00

Name

Model

Description

Parameter

Price

PD1000 InGaAs Photodiode Chip [PDF] [RFQ]

PD1000
Stock NO.: I80030007

Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1290μm×1290μm （Min Order:100PCS）

Response wavelngth: 1000-1680nm

Material: InGaAs

Active area: 1000um

Lead Time: in stock

USD 12.00

Parameter

Features

● High Responsivity, front side illuminated，double-side pads

● Φ=1mm, round optical window

● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment

E/O Characteristics

The Opto-electronic Characteristics（@Tc=22±3℃）

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	-	1000～1680			nm
Active Diameter	Φ	-	1000			μm
Reponsivity	Re	λ=1.31μm, VR=5V, φe=100μw	0.95	-	-	A/W
ForwardVoltage	VF	IF=1mA	-	-	0.6	V
Reverse Breakdown Voltage	VBR	ID=10 A, φe=0	35	-	-	V
Dark Current	ID	VR=5V, φe=0	-	-	2.5	nA
Capacitance	CPD	VR=5V, φe=0, f=1MHz	-	-	70	pF
Rising Time	tr	VR=5V, RL=50Ω	-	-	7	ns

Outline Diagram and Die Dimensions

1000.1.png

Die Size	1290μm×1290μm
Die Thickess	175±10μm
P Bond Pad Diameter	100μm
Photosensitive Diameter	1000μm
Extend Electrode Length	50μm
P metal	Au
N metal	Au

Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.

Absolute Maximum Rating

Parameter	Symbol	Rating	Unit
Operating temperature	TC	-40～+85	℃
Storage temperature	TSTG	-50～+125	℃
Forward Current	IF	10	mA
Reverse Current	IR	10	mA
ESD susceptibility	≥300		V

Application Notes

a. Take appropriate ESD protections to avoid damage.

b. InP chips are fragile and easily damaged, so special caution should be used when handling.

c. Do not handle with tweezers. A vacuum tip with a flat surface is recommended. Bonding force and temperature should be applied in a gradual fashion.

Application

● Fiber communication

● Fiber sensor

PD1000 InGaAs Photodiode Chip 2021-10-25

Product model

Parameter

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