PD1000 InGaAs Photodiode Chip

LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

Name	Model	Description	Parameter	Price
PD1000 InGaAs Photodiode Chip [PDF] [RFQ]	PD1000 Stock NO.: I80030007	Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1150μm×1150μm （Min Order:100PCS）	Response wavelngth: 1000-1680nm Material: InGaAs Active area: 1000um Lead Time: in stock	USD 12.00

Name

Model

Description

Parameter

Price

PD1000 InGaAs Photodiode Chip [PDF] [RFQ]

PD1000
Stock NO.: I80030007

Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1150μm×1150μm （Min Order:100PCS）

Response wavelngth: 1000-1680nm

Material: InGaAs

Active area: 1000um

Lead Time: in stock

USD 12.00

Parameter

Features

● High Responsivity, front side illuminated，double-side pads

● Φ=1mm, round optical window

● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment

E/O Characteristics

The Opto-electronic Characteristics（@Tc=22±3℃）

Parameter	Test Condition	Min.	Typ.	Max.	Unit
Responsivity1	λ=1310nm	0.90	0.95	—	A/W
Responsivity2	λ=1550nm	0.95	1.00	—	A/W
Dark Current	V=-5V	—	2.0	3.0	nA
Breakdown Voltage	I=-10µA	40.0	—	—	V
Capacitance	V=-5V,f=1MHz	—	45	55	pF
Forward Voltage	I=1mA	0.40	0.43	0.80	V

As shown in Figure 1 @ Vr=0V TC=22± 3℃

Responsivity, R (A/W)

Outline Diagram and Die Dimensions

As shown in figure 1

figure 1

Parameter	Min.	Typ.	Max.	Unit	Notes
Die Width	1140	1150	1160	µm
Die Length	1140	1150	1160	µm
Detection Window	—	1000	—	µm
Thickness	190	200	210	µm
Bonding Pad Diameter	—	150	—	µm	For p-pad

Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.

Absolute Maximum Rating

Parameter	Rating
Electrostatic Discharge (HBM)	＞1200V
Reverse Current	-10mA
Forward Current	10mA
Reverse Voltage	-20V
Operating Temperature	-40 to 85 ⁰C
Storage Temperature	-40 to 125 ⁰C

Attention:

Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD. Specifications are subject to change without notice.

Application

● Fiber communication

● Fiber sensor

PD1000 InGaAs Photodiode Chip

Product model

Parameter

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