PD300 InGaAs Photodiode Chip   2021-10-25    


InGaAs photodiodes offer superb response from 900nm to 1700nm, perfect for telecom and near IR detection. The 75 and 120 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling or Bare chips. These two sizes are also available with actively aligned FC receptacles. The 70 micron photodiode is perfect for high bandwidth applications while the 120 micron photodiode is perfect for active alignment applications. The 3mm photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 3mm photodiode is suitable for high sensitivity to weak signal applications.


Product model



Name Model Price
PD300 InGaAs Photodiode Chip  [PDF]  [RFQ]

PD300
Stock NO.: I80030008
USD 2.50 
 


Parameter



Features

● Response Range From 1000nm to 1680nm

● High Responsivity, front side illuminated,double-side pads

● Φ=300μm, round optical window 

E/O Characteristics

The Opto-electronic Characteristics(@Tc=22±3℃)

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

-

10001680

nm

Active Diameter

$

-

300

μm

Reponsivity

Re

λ=1.31μm,   VR=5V, φe=100μW

0.9

-

-

A/W

Forward Voltage

VF

IF=1mA

-

0.6

0.7

V

Reverse Breakdown Voltage

VBR

ID=10μA, φe=0

35

40

-

V

Dark Current

ID

VR=5V, φe=0

-

0.2

0.8

nA

Capacitance

CPD

VR=5V, φe=0,   f=1MHz

-

5

8

pF

Rising Time/Falling Time

Tr/Tf

VR=5V, φe=1mW

-

0.5

1

ns

DC Saturation Power

Sat

VR=0V

1.0

2.5

-

mW

VR=5V

6.0

14.0

-

Outline Diagram and Die Dimensions

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Die Size

500μm×500μm

Die Thickess

175±10μm

Bond Pad Diameter

75μm

Photosensitive Diameter

300μm

Extend Electrode Length

30μm

P metal

Au

N metal

Au

Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.


Absolute Maximum Rating

Parameter

Symbol

Rating

Unit

Operating temperature

TC

-40+85

Storage temperature

TSTG

-50+125

Forward Current

IF

10

mA

Reverse Current

IR

10

mA

ESD susceptibility

≥300

V

Matters needing attention:

a. Take appropriate ESD protections to avoid damage.

b. InP chips are fragile and easily damaged, so special caution should be used when handling. 

c. Do not handle with tweezers. A vacuum tip with a flat surface is recommended. Bonding force and temperature should be applied in a gradual fashion.

Application

● Fiber communication

● Fiber sensor



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