PL-IGS-AR1 InGaAs and SI hybrid PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1700 nm. The photosensitive area is 1-4 in diameter. Planar-passivated device structure.
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● Visible and near-infrared detecting
● Lager active diameter,
● Low noise,High reliability
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
V R1 =15V,λ=0.53µm,Φ e =10µW
V R1 =15V,λ=1.06µm,Φ e =10µW
V R2 =5V,λ=1.31µm,φ e =10µw
V R2 =5V,λ=1.55µm,φ e =10µw
V R1 =15V,R L1 =50Ω
V R2 =5V,R L2 =50Ω
Reverse breakdown voltage
I R1 =10µA
I R2 =10µA
V R1 =15V
V R2 =5V
Typical characteristical curve
Responsivity, R (A/W)
Application electric circuit
Absolute maximum ratings
● Blaze monitoring,
● Collimation apparatus,
● Spectral measurement,
● Laser tracking,
● Laser positioning.
□□□□: Cut off Wavelength
▽: Active Area
XX: Package/Fiber and Connector Type
TO: TO 5 Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.