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Home / Photodiode / InGaAs Photodiode / 10mm Ultra Large active area InGaAs Photodetector

10mm Ultra Large active area InGaAs Photodetector

InGaAs Large active area PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 10mm in diameter. Planar-passivated device structure.

Name Price Operation
10mm Ultra Large active area InGaAs Photodiode $1400.00
Features

● Top illumination planar PD

● Lager active diameter

● Low dark current

E/O Characteristics

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

9001700

nm

Active diameter

φ

10

mm

Reponsivity

 

Re

VR=5V,λ=1.31μm,φe=100μw

0.85

 

A/W

VR=5V,λ=1.55μm,φe=100μw

0.95

Response time

tS

VR=5V,RL=50Ω,f=2KHz

8

20

μs

Total capacitance

C

VR=5V,f=1KHz

3

10

nF

Dark current

ID

VR=5V,φe=0

25

100

nA

Shunt impedance

Rsh

VR=10mV

10

Reverse breakdown voltage

VBR

IR=10μA

25

V

Reponsivity Nouniformity

PRNU

VR=5V,λ=1.55μm,φe=100μw

±2

%


Typical Characteristics 

tt1.png

Dimensions and Pin definitions

tt3.png

Absolute Values

Parameter

Symbol

Rating

Unit

Operating Temperature

TC

-40+85

Storage Temperature

TSTG

-55+125

Forward Current

IF

10

mA

Reverse Current

IR

5

mA

Soldering temperature(time)

St

260℃(10s

-


Application

● Laser power meter

● LED / LD aging diagnosis

● Spectroscopy

● LED / LD characteristics

● Eye safety laser detection sensor