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Home / Laser diode / VCSEL Laser Diode / 1550 nm Vertical-Cavity Surface-Emitting Laser

1550 nm Vertical-Cavity Surface-Emitting Laser

The PL-VCSEL-1550-1-A81 1550nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO5 can. Wavelength tuning can be achieved via laser current and temperature tuning. package with TEC and PD Built in. It is special designed for High speed fiber communication.

Name Price Operation
1550nm SM VCSEL Laser diode Without TEC $450.00
1550nm SM VCSEL Laser diode With TEC $650.00
Features

● Low dependence of electrical and optical characteristics over temperature

● Data rates from OC-3 to OC-48

● Lower Power Consumption


E/O Characteristics

Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Notes

Threshold current

Ith


2

3

mA


Forward voltage

Vf



3

V


Series resistance

Rs


100

200

Ω


Output power

Po

0.7

1.0


mW


Wavelength

λ

1530

1550

1570

nm


Side mode suppression

SMSR

30

35


dB


Rise and fall time

Tr

tf


~100

~150


psec

(20%-80%)

Beam divergence

θ


10

12

degree

FWHM


Spectrum

1555.jpg


L-I Curve(T@25°C)

15551.png

Package Size

15552.png

Pin definition

15553.png

 

1

Thermistor-

4

NTC   Thermistor -Laser Cathode (-)

2

Thermistor+

5

Laser Anode   (+)

3

NTC Thermistor +10kΩ at 25°C



 

Absolute Maximum Ratings

Item

Symbol

Unit

Min

Typ

Max

Testing Condition

Chip Temperature

TOP

  ℃

+10

25

40


Forward Voltage

VR

V

0.8

1.2

1.8


Driving Current

If

mA

5

10

15mA


Electrical Power Dissipation

Pc

mw


-

5


TEC Forward Current

IPF

mA

-150

-

+300


Lead Soldering time


S


-

10s

260

Store Temperature

TSTG

-40

-

+85

2000hr

Operating Temperature

TOP

-55

-

+125


 (*TEC temperature must be below 150°C)


Application

● Access network for long distance (>2 km)

● Metro area network

● Gigabit Ethernet


OEM Info

PL-VCSEL-□□□□-☆-A8▽-XX

□□□□:Wavelength

0760:760nm

0795:794.7nm

*****

1653.7:1653.7nm

☆ :TEC

0:Without TEC

1:With TEC

▽:Wavelength Tolerance

1:±0.5nm

2:±1.5nm

XX: Package

TO46


User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.