Centre Wavelength

λ

1653.2

1653.7

1654.2

nm

Side Mode Suppression Ratio

SMSR

30

40

dB

Threshold Current

Ith

20

30

mA

Operating Current

Iop

80

150

mA

Chip output Power

Pf

10

15

30

mW

Quantum Efficiency

η

0.08

0.12

mW/mA

Current Tuning Coefficient

∆λ/∆I

0.015

nm/mA

Temperature Tuning Coefficient

∆λ/∆T

0.12

nm/K

Forward Voltage

Vf

1.3

2

V

Thermistor Resistance

RT

9.5

10

10.5

KΩ

Thermistor Temp. Coefficient

-4.4

%/°C

Connector

FC/APC

1

Thermistor

8

Case Ground

2

Thermistor

9

Case Ground

3

LD(-)

10

NC

4

Detector (+)

11

LD(+)

5

Detector (-)

12

LD (–), RF 

6

TEC (+)

13

LD (+)

7

TEC (–)

14

NC

1

Thermistor

8

NC

2

Thermistor

9

NC

3

NC

10

NC

4

PD Monitor Anode (-)

11

Laser Anode (+),Case Ground

5

PD Monitor Cathode (+)

12

RF Laser Input Cathode (–)

6

Thermoelectric Cooler (+)

13

Laser Anode (+),Case Ground

7

Thermoelectric Cooler (–)

14

NC

Case Temperature

  ℃

-5

25

70

Chip Temperature

℃

+10

25

40

Operating Current

mA

0

100

150

Forward Voltage

V

0.8

1.2

1.8

TEC Current

A

-

-

1.2

Reverse Voltage（LD）

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20