2.2mm InGaAs Quadrant PD integrated with 50um APD-LD-PD INC

2.2mm InGaAs Quadrant PD integrated with 50um APD

PL-1700-IGPA-QD1-TO InGaAs Quadrant PIN Photodiode hybrid with APD Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 2.2mm in diameter. The device consists of a PIN quadrant photo-diode and an 50um APD in the center．

	Picture	Name	Part NO.	Description	Response wavelngth	Material	Active area	Package	Lead Time	Price	Operation
		2.2mm InGaAs Quadrant PD integrated with 50um APD	PL-1700-IGPA-QD2.2-TO	Response Spectrum 1000~1700nm, Active diameter 1mm, Material InGaAs Hybrid (Photodiode and APD), Package TO5	1000-1700nm	InGaAs	2.2mm	TO-5	2-3 weeks	$1700.00

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk, High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

The Outline PIN Quadrant

Parameters	Sym	Test conditions	Min	Typ	Max	Unit
Spectral response range	λ	V R =5V	1000~1700			nm
Active diameter	φ	-	2.2			nm
Element gap	D1	-	50			um
Responsivity	Re	V R =5V ， P in =1μw, λ =1.55μm	0.95	1.0		A/W
Dark current	I_D	V R =5V， P in =0μw			10.0	nA
Reverse breakdown voltage	V_BR	I R =10μA， P in =0μw	40	45		V
-3dB bandwidth	BW	V R =5V,λ=1.55μm,R_L =50Ω	120			MHz
Crosstalk	S_L	V R =5V			2	%

The Central APD

Parameters	sym	Test Condition	Min	Typ	Max	Unit
Spectral response range	λ	-	1000~1700			nm
Active diameter	φ	-	0.2			nm
Gap between PIN and APD	d2	-	75			um
Responsibility	Re	P in =1μw， λ =1.55μm， M=10	9			A/W
Dark current	I_D	M=10, P in =0μw			30	nA
Reverse breakdown voltage	V_BR	I R =10μA， P in =0μw	40		60	V
Maximum multiplication gain	M_max	λ=1.55μm, P in =1μw	20
-3dB bandwidth	BW	λ=1.55μm，R L =50Ω，M=10	400			MHz
Temperature coefficient of V_BR	δ	Tc=-55～85℃	0.05		0.16	V/℃

Note: This Detector requires a feedback of Voltage Temperature when Operating.

Typical characteristical curve

Responsivity, R (A/W)

2.2.png

Wavelength, λ (nm)

Reverse breakdown voltage vs. temperature

2345截图20190319163412.png

Application electric circuit

2.3.jpg

Dimensions and Pin definitions

Bottom View

1	Central APD P +
2,4,6,8	4pcs PIN P +
5	Case
3,7	Common N- Pole

Absolute maximum ratings

Central APD

Item	Symbol	Unit	Min	Typ	Max	Testing Condition
Case Temperature	T_OP	℃	-5	25	70
Operating Voltage	V_R	V	39.6	40	59.04	0.99 V_br
Power Consumption	Pc	mw	80	100	120
Forward Current	I_f	mA		10
Lead Soldering time		S		-	10s	260℃
Store Temperature	T_STG	℃	-40	-	+85	2000hr
Operating Temperature	T_OP	℃	-55	-	+85
Relative Humidity	RH		5%	-	95%	Noncondensing

Out quadrant PIN

Operating voltage	5V	Operating temperature	-55~+85℃	Power Consumption	100mW
Forward current	10mA	Storage temperature	-55~+125℃	Soldering temp	260℃

Application

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

OEM Info

PL-□□□□-☆-QD▽-XX

□□□□：Cut off Wavelength

400:400nm

900:900nm

1700:1700nm

2100:2100nm

2400:2400nm

2700:2700nm

☆ ：Material

IGPA：InGaAs Hybrid（Photodiode and APD）

SiA：Si

▽：Active Area(Single element)

1：1mm

2：2.2mm

….

3:3mm

XX: Package/Fiber and Connector Type

TO:TO5 Package

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

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