Features
● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk, High reliability
● Good Reponsivity homogeneity of each Quadrant
E/O Characteristics
Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)
The Outline PIN Quadrant
Parameters | Sym | Test conditions | Min | Typ | Max | Unit |
Spectral response range | λ | V R =5V | 1000~1700 | nm |
Active diameter | φ | - | 2.2 | nm |
Element gap | D1 | - | 50 | um |
Responsivity | Re | V R =5V ， P in =1μw, λ =1.55μm | 0.95 | 1.0 |
| A/W |
Dark current | ID | V R =5V， P in =0μw |
|
| 10.0 | nA |
Reverse breakdown voltage | VBR | I R =10μA， P in =0μw | 40 | 45 |
| V |
-3dB bandwidth | BW | V R =5V,λ=1.55μm,RL =50Ω | 120 |
|
| MHz |
Crosstalk | SL | V R =5V |
|
| 2 | % |
The Central APD
Parameters | sym | Test Condition | Min | Typ | Max | Unit |
Spectral response range | λ | - | 1000~1700 | nm |
Active diameter | φ | - | 0.2 | nm |
Gap between PIN and APD | d2 | - | 75 | um |
Responsibility | Re | P in =1μw， λ =1.55μm， M=10 | 9 |
|
| A/W |
Dark current | ID | M=10, P in =0μw |
|
| 30 | nA |
Reverse breakdown voltage | VBR | I R =10μA， P in =0μw | 40 |
| 60 | V |
Maximum multiplication gain | Mmax | λ=1.55μm, P in =1μw | 20 |
|
|
|
-3dB bandwidth | BW | λ=1.55μm，R L =50Ω，M=10 | 400 |
|
| MHz |
Temperature coefficient of V BR | δ | Tc=-55～85℃ | 0.05 |
| 0.16 | V/℃ |
Note: This Detector requires a feedback of Voltage Temperature when Operating.
Typical characteristical curve
Responsivity, R (A/W)
Wavelength, λ (nm)
Reverse breakdown voltage vs. temperature
Application electric circuit
OEM Info
PL-□□□□-☆-QD▽-XX
□□□□：Cut off Wavelength
400:400nm
900:900nm
1700:1700nm
2100:2100nm
2400:2400nm
2700:2700nm
☆ ：Material
IGPA：InGaAs Hybrid（Photodiode and APD）
SiA：Si
▽：Active Area(Single element)
1：1mm
2：2.2mm
….
3:3mm
XX: Package/Fiber and Connector Type
TO:TO5 Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
