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Home / Photodiode / InGaAs Quadrant Photodiodes / 2.2mm InGaAs Quadrant PD integrated with 50um APD

2.2mm InGaAs Quadrant PD integrated with 50um APD

PL-1700-IGPA-QD1-TO InGaAs Quadrant PIN Photodiode hybrid with APD Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 2.2mm in diameter. The device consists of a PIN quadrant photo-diode and an 50um APD in the center.

Name Price Operation
2.2mm InGaAs Quadrant PD integrated with 50um APD $1700.00
Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk, High reliability

● Good Reponsivity homogeneity of each Quadrant 

E/O Characteristics

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

The Outline PIN Quadrant

Parameters

Sym

Test conditions

Min

Typ

Max

Unit

Spectral response range

λ

V R =5V

1000~1700

nm

Active diameter

φ

-

2.2

nm

Element gap

D1

-

50

um

Responsivity

Re

V R =5V P in =1μw,   λ

=1.55μm

0.95

1.0


A/W

Dark current

ID

V R =5V P in =0μw



10.0

nA

Reverse breakdown voltage

VBR

I R =10μA P in =0μw

40

45


V

-3dB bandwidth

BW

V R =5V,λ=1.55μm,RL   =50Ω

120



MHz

Crosstalk

SL

V R =5V



2

%

The Central APD

Parameters

sym

Test Condition

Min

Typ

Max

Unit

Spectral response range

λ

-

1000~1700

nm

Active diameter

φ

-

0.2

nm

Gap between PIN   and APD

d2

-

75

um

Responsibility

Re

P in =1μw λ =1.55μm

M=10

9



A/W

Dark current

ID

M=10, P in =0μw



30

nA

Reverse breakdown voltage

VBR

I R =10μA P in =0μw

40


60

V

Maximum multiplication gain

Mmax

λ=1.55μm, P in   =1μw

20




-3dB bandwidth

BW

λ=1.55μmR L =50ΩM=10

400



MHz

Temperature coefficient of V BR

δ

Tc=-5585

0.05


0.16

V/

Note: This Detector requires a feedback of Voltage Temperature when Operating.

Typical characteristical curve

Responsivity, R (A/W)

2.2.png

                                                                              Wavelength, λ (nm)

Reverse breakdown voltage vs. temperature

2345截图20190319163412.png

Application electric circuit

2.3.jpg

Dimensions and Pin definitions

w4.jpg

                                 bv.png

                                                           Bottom View

1

Central APD  P +

2,4,6,8

4pcs PIN  P +

5

Case

3,7

Common N- Pole

Absolute maximum ratings 

Central APD

Item

Symbol

Unit

Min

Typ

Max

Testing Condition

Case Temperature

TOP

  ℃

-5

25

70


Operating Voltage

VR

V

39.6

40

59.04

0.99 Vbr

Power Consumption

Pc

mw

80

100

120


Forward Current

If

mA


10



Lead Soldering time


S


-

10s

260

Store Temperature

TSTG

-40

-

+85

2000hr

Operating Temperature

TOP

-55

-

+85


Relative Humidity

RH


5%

-

95%

Noncondensing

Out quadrant PIN

Operating voltage

5V

Operating temperature

-55~+85

Power Consumption

100mW

Forward current

10mA

Storage   temperature

-55~+125

Soldering   temp

260

Application

● Laser guidance 

● Laser positioning

● Laser navigation

● Laser range finder 

OEM Info

PL-□□□□-☆-QD▽-XX

□□□□:Cut off Wavelength

400:400nm

900:900nm

1700:1700nm

2100:2100nm

2400:2400nm

2700:2700nm

☆ :Material

IGPA:InGaAs Hybrid(Photodiode and APD)

SiA:Si

▽:Active Area(Single element)

1:1mm

2:2.2mm

….

3:3mm

XX: Package/Fiber and Connector Type

TO:TO5 Package

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.